IEEE RTP 2010 Conference - Partial List of Contributions


Workshop: Advanced Modeling of Thermal and Ion-implantation Processes

9:00AM-10:00AM
Modeling Millisecond Annealing and Diffusion
Renata Camillo-Castillo, IBM

10:00-10:30 Break

10:30-11:30AM
Properties of Laser Annealed Silicon
Susan Earles, Florida Institute of Technology

11:30-1:00PM Lunch Break

1:00-2:00PM
Modeling Solid Phase Epitaxial Regrowth and Dopant Activation
Nick Rudawski (UCSB)

2:00-3:00 PM
Awaiting title
Hal Kennel, Intel

3:00-3:15 Break

3:15-4:15 PM
Requirements and capabilities for state of the art general purpose process simulation
Mark Johnson, Synopsis



IEEE RTP 2010 Conference



Comparison of Solid Phase Epi (SPE) Non-melt to Liquid Phase Epi (LPE) Melt Laser Annealing for 22nm Node n+ USJ Formation

John Borland¹, Seiichi Shishiguchi², Norihiko Matsuzaka², Masami Hane³, Masayasu Tanjyo⁴, Jeremy Zelenko⁵, Peter Oesterlin^6
1J.O.B. Technologies, Aiea, HI
²Renesas Electronics Corp., Sagamihara, Japan
³Renesas Electronics America Inc., Albany, NY
⁴Nissin Ion Equipment Co. Ltd., Kyoto, Japan
⁵Applied Materials Inc., Sunnyvale, CA
⁶Jenoptik Innovavent, Gottingen, Germany


Experimental Investigations of the Rapid Thermal Process Slip Window

Joseph F. Shepard Jr.
IBM East Fishkill, NY


Influence of the process sequence and thermal budget on the strain of SiC stressor layers formed by Ion Implantation

Erik Rosseel¹, Claude Ortolland¹, Andriy Hikavyy¹, Tom Schram¹, Annelies Falepin², Thomas Hoffmann¹, Wilfried Vandervorst^1,3, Mike Ameen⁴, Lenny Rubin^4
1IMEC, Leuven, Belgium
²NXP semiconductors, Leuven, Belgium
³Instituut voor Kern- en Stralingsfysika, KU Leuven, Belgium
⁴Axcelis Technologies, Inc., Beverly, MA


An Overview of ISMI's Comprehensive Approach to Fab Continuous Improvement

Tony Speranza
ISMI-Sematech, Austin, TX


Location- and orientation-controlled, large single grain silicon induced by excimer laser crystallization

M.R. Tajari Mofrad, R. Ishihara, J. van der Cingel and C.I.M. Beenakker
Delft University of Technology, Delft, The Netherlands


Backside Activation of Power Device IGBTs by Microsecond-Pulsed Green Laser Annealing Thermally Assisted with CW Diode Laser

Toshiaki Seino¹, Naoyuki Kobayashi¹, Yuko Arai1¹, Toshio Kudo¹, Kazuya Sano^2
1The Japan Steel Works, Kanagawa, Japan
²The Japan Steel Works, LTD., Tokyo, Japan


Model-based Temperature Control of Heated Plates

J. L. Ebert, K. J. Donhowe, D. de Roover, L. Porter, G. W. van der Linden, A. Emami
SC Solutions, Inc., Sunnyvale, CA


Impact of laser anneal thermal budget on the quality of thin SiGe channels with a high Ge content

Erik Rosseel¹, Andriy Hikavyy¹, Jean-Luc Everaert¹, Liesbeth Witters¹, Jerome Mitard¹, Thomas Hoffmann¹, Wilfried Vandervorsta^{2 1}IMEC, Leuven, Belgium
²Instituut voor Kern- en Stralingsfysika, Leuven, Belgium


Characterization of Dopant Activation, Mobility and Diffusion in Advanced Millisecond

Laser Spike Annealing Shaoyin Chen¹, Zhen Dai², Xiaoru Wang¹, Cam Lu¹, Michael Thompson2, Yun Wang¹, Jim McWherter^1
1Ultratech, San Jose, CA, USA
²Cornell University, Ithaca, NY, USA


Effects of Cluster Carbon Implantation at Low Temperature on Damage Recovery after Rapid Thermal Annealing

H. Onoda, N. Hamamoto, T. Nagayama, M. Tanjyo, S. Umisedo, Y. Kawamura, M. Hashimoto, Y. Koga, N. Maehara, Y. Nakashima, H. Yoshimi , S. Sezaki
Nissin Ion Equipment Co., Kyoto, Japan


Formation of Titanium silicide by Millisecond anneal

R. Beneyton¹, P. Morin¹, S. Muthukrishnan², D. Larmagnac³, A.J. Mayur², C. T. Richard^1
1ST Microelectronics, Crolles, FRANCE
²Applied Materials, Sunnyvale, CA, USA
³Applied Materials, Meylan, France


Fast and dynamic simulation uniformity control in RTP furnaces

Grace Mouawad, Afif Atajouri, Georges El Hitti, Maroun Nemer
Ecole des Mines de Paris, Center for Energy Studies, Palaiseau, France


Role of Anneal Temperature On Boron Mobility

S. Prussin¹, J. Reyes¹, H. Onoda2, N. Hamamoto2, T. Nagayama², M. Tanjyo², S. Umisedo², Y. Kawamura², M. Hashimoto², Y. Koga², N. Maehara², Y. Nakashima², H. Yoshimi², S. Sezaki², Michael Current^3
1Department of Electrical Engineering, University of California, Los Angeles, CA
²Nissin Ion Equipment Co., Kyoto, Japan
³Current Scientific, San Jose, CA


A 3D model for simulating temperature and stress profiles during sub-millisecond Laser Spike Annealing

Krishna Iyengar¹, Paulette Clancy², Michael Thompson^3
1,School of Theoretical & Applied Mechanics, Cornell University, Ithaca, NY
²,School of Chemical & Biomolecular Engineering, Cornell University, Ithaca, NY
³Department of Materials Science & Engineering, Cornell University, Ithaca, NY


Characterization of Nickel Silicide Transition Behavior Using Non-Contact CGS Metrology

David M. Owen¹, Jeff Hebb¹, Shrinivas Shetty¹, Yun Wang¹, Van Le¹, Robert Binder², Rainer Giedigkeit², Stephan Waidmann^2
1Ultratech Inc., San Jose, CA
²GlobalFoundries, Dresden, Germany


Investigation of the thermal coefficient of electrical resistance and 1/f noise of laser-annealed a-Si layers

J. Foerster, H. Vogt, A. Grabmaier
Institute of Electronic Components and Circuits, University of Duisburg-Essen, Duisburg, Germany


Novel Chlorine-enriched SiO₂/Si₃N₄ Bilayers to Downscale gate Towards Sib-45nm and Beyond

Frank CC. Huang, Y.R. Wang, Charles CL. Lin, Shao Wei Wang, Tsuo Wen Lu, Michael Chan, Chan Lon Yang, J. Y. Wu
United Microelectronics Corp., Sinshih Township, Taiwan


A Novel Hydrogen Rich Interfacial Layer to Downscale High-K Dielectric

Shao Wei Wang, Y.R. Wang, Charles CL. Lin, Frank CC. Huang, Michael Chan, Chan Lon Yang, J. Y. Wu
United Microelectronics Corp., Sinshih Township, Taiwan


Furnace annealing effects in the formation of titanium silicide schottky barriers

E. Barbarini, S. Guastella<, C. F. Pirri
Physics Department, Politecnico di Torino, Torino, Italy


Activation of Silicon Wafer by Excimer Laser

Rainer Paetzel¹, Jan Brune¹, Frank Simon¹, Ludolf Herbst¹ Masashi Machida², Junichi Shida^2
1Coherent, GmbH, Goettingen, Germany
²The Japan Steel Works, Yokohama, Japan


Impact of Dual Beam Laser Spike Annealing Parameters on Nickel Silicide Formation Characteristics

Shrinivas Shetty¹, Van Le¹, Jeff Hebb¹, Yun Wang¹, Dave Owen¹, Robert Binder², Rainer Giedigkeit², Stephan Waidmann^2
1Ultratech Inc., 3050 Zanker Rd., San Jose, CA
²Global Foundries Inc. Wilschdorfer Landstrasse , Dresden, Germany


Investigation of Ni-based Silicide Formation on Different Substrates by Dynamic Surface Annealing

Yonggen He¹, Bing Wu¹, Guobin Yu¹, Houguo Yang¹, Jin Lin¹, Seanf Zhang¹, Jiong-Ping Lu¹, JiYue Tang², Ganming Zhao^2
1Technology R&D center, Semiconductor Manufacturing International Corporation, Shanghai, PRC
²Applied Materials, Shanghai, PRC


High Throughput Laser Doping for Selective Emitter Crystalline Si Solar Cell

Peter Oesterlin¹, Ulrich Jager^2
1INNOVAVENT GmbH, Goettingen, Germany
²Fraunhofer Institute for Solar Energy Systems, Freiburg, Germany


Process and RTP Equipment Design for Cu(In,Ga)Se₂ Layer Formation Using in-situ XRD Techniques

I. M. Kotschau, A. Kampmann, T. Hahn, J. Hinze, E. Richter, O. Pursche, S. Gorse
Centrotherm Photovoltaics AG, Blaubern, Germany


Nitric Oxide Rapid Thermal Nitridation for Flash Memory Applications

T. Guarini, M. Bevan, M. Ripley, U. Ganguly, J. Swenberg
Applied Materials, Santa Clara, CA


Ultrathin SiO₂ Interface Layer Growth

M. Bevan, R. Curtis, T. Guarini, Wei Liu, S. Hung
Applied Materials, Santa Clara, CA


Nitrided Gate Oxide Formed by Rapid Thermal Processing for SiC MOSFET

A. Constant^1,2, P. Godignon¹, E. Pausas¹, A. Caboni¹, J. Camassel², J. Millan^1
1IMB-CNM, CSIS, Barcelona, Spain
²GES, UMR-CNRS, Montpellier, France


Pure Boron CVD Layers: A New Material in Silicon Device Processing

Lis K. Nanver, T. L. M. Scholtes, F. Sarubbi, W.B. de Boer, G. Lorito, A. Šakic, P. Maleki, S. Milosavljevic
Delft University of Technology, Delft, The Netherlands


Source/Drain Doping Strategy and Performance

Bo Lojek, Atmel Corporation, Colorado Springs, CO


22nm Node p+ USJ Defect Analysis with Various PAI and HALO Structures Using Laser Annealing

John Borland¹, Lubek Jastrzeski², Miklos Tallian^2
1J.O.B. Technologies, Aiea, HI
²Semilab, Budapest, Hungary