Welcoming Remarks

Dr. Karen H. Brown, Deputy Director of NIST, Gaithersburg, MD

Doping Requirements for Future Technology Generations

Paul A. Packan, INTEL, Portland Technology Development Group, Hillsboro, OR

Methods in Rapid Thermal Annealing

A.T. Fiory, Bell Laboratories, Lucent Technologies, Murray Hill, NJ

B. Van Eck, SEMATECH, Austin, TX

MANUFACTURING ISSUES IN GATE DIELECTRICS AND ANNEALING

J. Mavoori, S.V. Hattangady, R. Khamankar, A. Rotondaro, J. Loewecke, R. L.Wise, Texas Instruments, Inc., Dallas, TX, K. Eason, Stanford University, Stanford, CA , A. Hegedus, R. Jallepally, J. Goli, D. Noble, G. Miner, Applied Materials, Santa Clara, CA

Gate Dielectric Processing Issues in a High-Volume Semiconductor Manufacturing Fab

R. G. Cosway, J. R. Naujokaitis, Motorola Chandler, AZ

Oxide Manufacturing Issues in Processing of Nonvolatile Memory Devices

M. Good, B. Lojek, Atmel Corporation, Colorado Springs, CO

Wet-Oxidation on RTP Using Pyrogenic Principle

Armand Beyer, Regina Hayn, Wilhelm Kegel, Jens-Uwe Sachse Infineon Technologies, Dresden, Germany

Implementing of Rapid Thermal Processing for Raw Process Time Reduction

Rob Miller, Jim Nakos, Jeffrey Gilbert, Arne Ballantine, Matthew Gallagher, Ron Warren, Dane Reichenbach, Roger Dandurand, Sophia Ratenberg, Donna Johnson, Ed Sengle, Jack Pekarik, Beth Ward, Jim Quinlivan, IBM Semiconductor Manufacturing, Essex Junction, VT

TEMPERATURE MEASUREMENT AND CONTROL IN RTP SYSTEMS

Calibration of Light Pipe Radiation Thermometers in an RTP Tool at 1000 oC with an Uncertainty of 2 oC

K.G. Kreider, D.P. DeWitt, C. W. Meyer, V.P. Scheureman, NIST, Gaithersburg MD

RTP Radiance Centura Temperature Measurement System

A. Hunter, M. Yam, A. Rubinchik, B. Adams, E. Jadushlever, P. O'Brien, Applied Materials, Santa Clara, CA

The UT/NIST/SA/ISMT Thermometry Test Bed

B. Van Eck, F. Geyling, Int. SEMATECH, Austin, TX K. Ball, B. Powers, J. Blakeney, University of Texas, Austin, TX

Characterization of Lightpipe Radiation Thermometers for the NIST Test Bed

B. K. Tsai, C.W. Meyer, NIST, Gaithersburg MD F.J. Lovas, University of Illinois, Urbana, IL

Impact of Directional Properties on the Radiometric Temperature Measurement in Rapid Thermal Processing

Y.H. Zhou, Y. J. Shen, Z. M. Zhang, University of Florida, Gainesville, FL, B.K. Tsai, D.P. DeWitt, NIST Gaithersburg, MD

Temperature Uniformity During Impulse Anneal

M. Lefrancoise, D. Camm, Vortek Industries, Vancouver, Canada

Temperature Control in RTP Using a Nonparametric Adaptive Control

J. Y. Choi, H.M. Do, H.S. Choi, School of Electrical Engineering, ASRI, Seoul, Korea

State of the art Modulation Based Temperature Measurement for Advanced RTP

M. Hauf, Ch. Merkl, Ch. Striebel, S. Muller, H. Balthasar, R. Bremensdorfer, Steag RTP System, Dornstadt, Germany

Efficacy and Performance of Emissivity Cancellation Probes for Pyrometric Systems

M. Fischer, P.J. Regulski, D. Schaafsma, Tetra Tech Data Systems, Carlsbad, CA

Real Time Same-Point Emissivity and Temperature Measurement for RTP

Y. Noar, I. Ilouz, Y. Baharav, Y. Ish-shalom, CI System, Migdal HaEmek, Israel

FURNACE AND RTP OXIDE

Advanced Characterization of RTP Steam Oxidation

D. Reichenbach, J. Nakos, IBM Microelectronics, Essex Junction, VT, J. Krasowski, R. Dubois, STEAG RTP System, San Jose, CA

Dry Oxidation Film Formation using Single Wafer Furnace

T. Fukada, W.S. Yoo, H. Kuribayashi, WaferMaster, San Jose, CA, H. Kitayama, Tokyo Electron, Yamanashi, Japan, N. Takahashi, K. Enjoji, K. Sunohara, Tokyo Electron, Tokyo, Japan

Integrated Gate Stack Formation in a Cluster Tool for 100 nm Technology Node and Beyond

C. Pomarede, J. Roberts, E. Shero, J. Weidmann, C. Werkhoven, ASM America, Phoenix, AZ

Selective Wafer Atmospheric Pressure Rapid Thermal Process For Selective Oxidation of Silicon

J.H. Das, V. Kirtikar, A.D. Daniel, S. P. Tay, STEAG RTP System, San Jose, CA C. Powell, R. Weimer, Micron technology, Boise, ID

A Novel LOCOS Field Oxide Ungrowth (FOU) Improvement by Furnace O2 Flow Ratio Modification

S.Y. Wang, K.Y. Wu, R.H. Chang, C.K.L. Wu, H.B. Lu, P.W. Yen, UMC, Hsin-Chu City, Taiwan

Electrical and Physical Properties of Silicon Nitride on Oxide for Gate Dielectric Applications with EOT of 14.6 A deposited and Annealed in a Rapid Thermal CVD Cluster Tool

S.C. Levy, R.S. Bloom, A. Kepten, J. lam, H. Spielberg, E. Iskevitch, STEAG CVD Systems, San Jose, CA and Migdal Haemek, Israel

Investigation of Rapid Thermal Annealing of High-k Dielectric ZrO2 Films in Various Gas Ambient

Y.Z. Hu, R. Sharangpani, S.P. Tay, STEAG RTP System, San Jose, CA

Rapid Thermal Chlorinated Oxidation Using in-situ Generated HCl

R. Sharangpani, S.P. Tay, STEAG RTP System, San Jose, CA

SPIKE ANNEALING

Optimized Spike Anneal Temperature-Time Profiles for Advanced S/D Extension Requirements

A.J. Mayur, A. Jaggi, Applied Materials, Santa Clara, CA, A. Jain, Texas Instruments, Dallas, TX

Spike Annealing of Implanted PMOS Gates

A. T. Fiory, Bell Laboratories, Lucent Technologies, Murray Hill, NJ K. K. Bourdelle, P.K. Roy, Bell Laboratories, Lucent Technologies, Orlando, FL S.P. McCoy, Vortek Industries, Vancouver, Canada

Establishing Production-worthy Spike Anneal Process for Ultra-Shallow Junctions

J. Goli, Applied Materials, Santa Clara, CA, A. Jain, Texas Instruments, Dallas, TX

Spike Anneal, TED and Fast Heating Rate: Are They Related?

B. Lojek, Atmel, Colorado Springs, CO

THERMAL PROCESSING EQUIPMENT

Single Wafer Furnace with a Vacuum Loadlock

W.S. Yoo, T. Fukada, h. Kuribayashi, WaferMasters, San Jose, CA, H. Kitayama, Tokyo Electron, Yamanschi, Japan, N. Takahashi, K. Enjoji, K. Sunohara Tokyo Electron, Tokyo, Japan

A Proposed RTP Concept for Low Temperature Applications

G. Chizinsky, HeatFlow Technologies, Beverly Farms, MA

Hot Wall RTP for Thin Film in Advanced Device

C. Ratliff, , R. Herring, N. Osborne, J. Yao, SVG Thermal System, Scotts Valley, CA, R. Tauber, Clovis, CA A. Laser, Xicor, Milpitas, CA

Data Collection from an Applied Materials RTP Tool

T. J. Riley, AMD, Austin, TX

A Multifunctional Role Played by RTP in a Wafer Thinning Operation

P. Cunningham, P. Delivorias, CHIPS Inc., West Peabody, MA, G. Chizinsky, HeatFlow Technologies, Beverly Farms, MA

Novel Process of Manufacturing High Purity Opaque Quartz

F. Ahlgren, R. Mace, GE Quartz Cleveland, OH; H. Young, Hayward Quartz Technology, Fremont, CA

An Evaluation of Semiconductor Grade Polysilicon Fixtures in Thin-Film (LPCVD-Nitride and Poly), High Temperature and RTP Furnace Application

J. E. Boyle, R. Zehavi, Integrated Materials, San Jose, CA

ADVANCED THERMAL PROCESSING

Evaluation of an AST3000 Rapid Thermal processor in 300 mm Mass Production

S. Frigge, STEAG RTP System, Dornstadt, Germany

Examination of Diffusion of Be ion Implanted into GaAs Wafer

T. Taniguchi, Japan Radio Co., Japan

Influence on the Junction Leakage Current of the variation in the Bulk Defects Density after Heat Treatment of Diffused Silicon Structures

V. V.N. Obreja, Institute for Microtechnology, Bucharest, Romania

Characterization of RTPCVD Silicon Nitride

W.H. Lai, M.F. Li, T.C. Ang, S.Y. loong, H.N. Chua, W.B. Loh, C.S. Lee, B. Ramachandran, Chartered Semiconductors, Singapore

Non-Destructive Monitoring of RTA process of Cobalt Silicide

J. Kluth, AMD, Sunnyvalle, CA. J. Mi, P. Borden, Boxer Cross, Menlo Park, CA

Temperature Uniformity Characterization of Single Wafer Furnace using Titanium Silicide Process

W.S. Yoo, T. Fukada, WaferMasters, San Jose, CA, H. Kitayama, Tokyo Electron, Yamanschi, Japan, N. Takahashi, K. Enjoji, K. Sunohara, Tokyo Electron, Tokyo, Japan

Tuning RTP's for Slip-Free Processing at High Temperatures

C. Lottes, MEMC, St. Peters, MO A. Rauther, P. Schmid, W. Lerch, STEAG RTP Systems, Dornstadt, Germany

Thermal Stability for Mo/Si and Mo/B4C Multilayer for soft X-ray Mirrors

Yuzhi Xue, C. Shen, J. Lin, Y. Ma, J. Cao, Changchun Optical Mechanical Institute, China