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10th IEEE International Conference on Advanced Thermal Processing of Semiconductors

RTP 2002

September 25 - 27, 2002

The Coast Plaza Hotel, Vancouver,

Canada

IEEE Catalog Number:02EX574
ISBN:0-7803-7465-7
Library of Congress:2002103269

 

 

Ten Years of RTP Conference
B. Lojek, Atmel Corporation

Engineering Ultra-Shallow Junctions using fRTP
D. Camm, , J. Gelpey, T. Thrum, G. C. Stuart, , J.K. Elliot, Vortek Industries

Growth Modes and Characterization of Thin RTP Silicon Oxides
I. Eisele, A. Ludsteck, J. Schulze, University of Bundeswehr Munich Z. Nenyei, Mattson Thermal Products

An Analytical Approach to Quantify the Thermal Budget in Consideration of Consecutive Thermal Processing Steps
J. Regner, Technical University of Munich

Emissivity of Silicon: A Mystery to Some But Not to All
B. Lojek, Atmel Corporation

Advanced Implant Annealing for the 65 nm Technology Node
A. Jain, L. Robertson, Texas Instruments K.A. Gable, University of Florida

Integrating World Class Radiance RTP Technology onto a Low Cost of Ownership Production-Worthy Platform
R. Boas, N. Tam, W. Chang, T. Leong, T. Green, Applied Materials

Rapid Isothermal Batch Processing
A. Dip, R. Soave, S. Kaushal, K. Nakao, S. Sasaki, T. Tsuda, Tokyo Electron

History of Semiconductors Diffusion Engineering
B. Lojek, Atmel Corporation

Pattern Effects and How to Explore Them
J. Niess, P.J. Timans, Z. Nenyei, Mattson Technology, R. Berger, Infineon Technologies

Effects of Wafer Emissivity on Rapid Thermal Processing Temperature Measurement
D.H. Chen, D.P. DeWitt, B.K. Tsai, K.G. Kreider, W.A. Kimes, NIST

Reduction of Pattern Effect in RTP Centura System
W. Aderhold, S. Porch, A. Hunter, Applied Materials

Comparison of Silicon Wafer Temperature Measurements using Thin Film Thermocouples and Lightpipe Radiation Thermometers in Thermometry Test Bed
K. S. Ball, G. Y. Tan, The University of Texas

Temperature Diagnostics for a Dual-Arc FRTP Tool
G.C. Stuart, D.K. Camm, J. Cibere, L. Kaludjeric, S.L. Kervin, A. Lu, K.J. McDonnell, N. Tam, Vortek Industries

Rapid Photothermal Processing of High Dielectric Constant Gate Dielectrics for sub 70 nm Silicon CMOS Technology
M. Fakhruddin, R. Singh, K. F. Pole, Clemson University, S. Kar, Indian Institute of Technology

Physical Characterization of High-K Gate Dielectric Film Systems Processed by RTA and Spike Anneal
P.S. Lysaght, B. Foran, G. Bersuker, R. Tichy, L. Larson, R.W. Murto, H.R. Huff, International Sematech

Characterizing Impant Behavior During Flash RTP by Means of Backside Diagnostics
J. Ross, S. McCoy, K. Elliott, J. Gelpey, Vortek Industries, D.F. Downey, E.A. Arevalo, Varian Semiconductor

System Analysis Applied to Modeling Dopant Activation and TED in Rapid Thermal Annealing
R. Gunawan, M.Y. L. Jung, R. D. Braatz, E.G. Seebauer, University of Illinois

Stress Release for Shallow Trench Isolation by Single-Wafer Rapid-Thermal Steam Oxidation
C. Luoh, O. Chen, L.W. Yang, H.H. Shih, K.C. Chen, C. Hsueh, H. Chung, S. Pan, C.Y. Lu, Macronix

Application of 100% Ozone Gas Process to Rapid Low-temperature Oxidation
H. Nonaka, S. Ichimura, National Institute of Technology Japan T. Nishiguchi, Y. Morikawa, M. Kekura, M. Miyamoto, Meidensha Corporation

Applications of Rapid Thermal Process to Nitridation of Tungsten and Denudation of WNx for Poly-Si/Metal Gates
Y. Z. Hu, S.P. Tay, Mattson Technology

Measurement of Nonthermal Illumination-Enhanced Diffusion in Silicon
M.Y.L. Jung, E.G. Seebauer, University of Illionois

Conductive Borides Used for Junction Formation and Integration with Contacts in Deep 0.1 um MOSFETs
W. Zagodzon-Wosik, R. Ranjit, D.B. Ravindranath, Z. Zhang, J. Charlson, I. Rusakova, P. van der Heide, University of Houston L. Larson, J. Bennett, R. Tichy, M. Beebe, International Sematech

Rapid Thermal Curing of Low-k Spin-on Films
R. Sharangpani, S.P. Tay, Mattson Technology

A Study of Ion Implantation Annealing Resistance in InGaP/InGaAs/GaAs-Epi Structure Applicable to InGaAs based HFET
K. Kasai, T. Taniguchi, Japan Radio Co. Ltd.

Impact of Nitrogen Doping on Gate Oxide Integrity on 300 mm Silicon Wafers after RTP in Hydrogen Ambient
C. Seuring, A. Huber, T. Passek, W. v Ammon, T. Muller, Wacker Siltronic K. Meyer, W. Lerch, Mattson Technology

Low Temperatures in RTP
T. Gutt, T. Steinegger, Infenion Technologies

Cycle Time and Process Improvement by Single Wafer Processors in Production Environment
K.C. Chen, H.H. Shih, C.C. Hsueh, H. Chung , S. Pam, C.Y. Lu, , Macronix, A. Chou, S. S. Chen, Applied Materials

Finite Element Modeling of High Power Laser Diodes
M Labudovic, Corning Lasertron

Advances in Laser Annealing Technology for the Poly-Si Material Engineering and Ultra-High-Performance Device Fabrication
A.T. Voutsas, Sharp Labs of America

Rapid Thermal Annealing in the Microsecond Regime
M.O. Thompson, Cornell University, Somit Talwar, Ultratech Stepper

Insitu Cleaning of LPCVD Furnaces using a Thermal NF3 Etch Process
E. Timmermans, M. Teepen, F. Huussen, R. Wilhelm, ASM International A.D. Johnson, R.V. Pearce, Air Products and Chemicals