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11th IEEE International Conference on Advanced Thermal Processing of Semiconductors
RTP 2003
September 23 - 26, 2003
The Westin Francis Marion Hotel,
Charleston, SC
IEEE Catalog Number:03EX696
ISBN:0-7803-7874-1
Library of Congress:2003103049
Thermal Performance Challenges for Rapid Thermal Processing
J. Hebb, Axcelis
KrF Excimer Laser Annealing for Ultra Shallow Junction Formation:
Approach for Irradiation Energy Density Reduction
K. Shibahara, K. Kurobe, Y. Ishikawa, K. Kagawa, Y. Niwatsukino,
A. Matsuno, Hiroshima University
Challenges for Ultra Shallow Junction Formation Technologies
Beyond the 90nm Node
P.J. Timans, W. Lerch, J. Niess, S. Paul, N. Acharya,
Z. Nenyei, Mattson Technology
Overview of NIST Metrology Development for the Semiconductor
Industry
S. Knight, NIST, Gaithersburg
Rapid Thermal Growth of Silicon Nitride Films
I. Eisele, A. Ludsteck, Bundeswehr University, Neubiberg, Z. Nenyei,
Mattson Technology
Advantages of in-situ RTP for the Fabrication of Metal/high-dielectric
Constant Gate Dielectric Stack for sub 90 nm CMOS Technology
D. Damjanovic, K.F. Poole, R. Singh, Clemson University
Flash Thermal Processing Through the Melting Point of Silicon
J. J. Cibere, S. P. McCoy, D. Camm, G. Stuart, K. Elliott, Vortek Industries
Continuity in Development of Ultra Shallow Junctions for
135-45 nm CMOS: The Tool and Annealing Methods
V.I. Kuznetsov, A.J.M.M. van Zuthpen, H. R. Kerp, P. G. Vermont,
X. Pages, J.J. van Hapert, K. van der Jeugd, E.H.A. Granneman,
ASM International, Bilthoven
Heat Transfer in Product Patterned Silicon Semiconductor Substrate
B. Lojek, Atmel Corporation
Traceable Emissivity Measurements in RTP Using Room Temperature
Reflectometry
A. Hunter, B. Adams, R. Ramanujam, Applied Materials, Santa Clara
Use of Optical Fiber Thermometer in High Temperature Environments
M. R. Jones, D. G. Barker, Birgham Young University, Provo
Traceable Temperature Calibrations of Radiation Thermometers for
Rapid Thermal Processing
Benjamin K. Tsai, NIST, Gaithersburg
Study of the Radiative Properties of Silicon-Based Materials for
Thermal Processing and Control
Z.M. Zhang, B.J. Lee, H.J. Lee, Georgia Institute of Technology
Thin Film and Emissivity Effects on Radiometric Temperature
Measurement Accuracy
J. Bodycomb, I Ferguson, Bellwether Instruments, Columbia
Light Pipe Proximity Effects on Si Wafer Temperature in Rapid
Thermal Processing Tools
K. G. Kreider, D.H. Chen, D. P. DeWitt, W.A. Kimes, and B.K. Tsai,
NIST Gaithersburg
Temperature Dependent Emissivity Metrology Development at
NIST in Support of RTP Needs
L. M. Hanssen, V. Khromchenko, S. N. Mekhontsev, NIST
Developing of Experimentally Validated Optical Property Models
B.J. Lee, Z.M. Zhang, Georgia Institute of Technology
In-Situ Steam Generation for Shallow Trench Isolation in
Sub-100nm Devices
Hali J.L. Forstner, F. Nouri, C. Olsen, Applied Materials, Sunnyvale
A novel method for RTP low temperature monitor
C. H. Chang, M. F. Hsieh, T. W. Liu, J. T. Lin,
UMC Hsin-Chu City
Study of the activation of low energy implanted-Arsenic annealed
in pure N2 in a large range of annealing temperatures from 650°C
to 1100°C
R. El Farhane, M. Müller, Philips, A. Halimaoui, F. Wacquant,
ST Microelectronics, Crolles, C. Laviron, LETI-CEA, Grenoble
Sensor Location, Lamp Grouping, Identification, and Multivariable
Iterative Learning Control of an RTP Process for Maximum
Uniformity of Wafer Temperature Distribution
M. Cho, Conwell Co., LTD., S. Joo, Kornic Systems Co., LTD.,
Yonghee Lee, and Kwang Soon Lee, Sogang University
Batch Reactor Design Optimization Using Computational Fluid Dynamics
Dynamics
S. Mokhtari, J. Bailey, ASML Thermal Division, Scotts Valley
New Directions in Thermal Batch Processing
R. Herring, T. Lazerand, C. Porter, ASML Thermal Division, Scotts Valley
Design of Halogen Lamps for Rapid Thermal Processing
J. M. Ranish, Applied Materials, Santa Clara
An Examination of Athermal, Photonic Effects on Boron
Diffusion and Activation During Microwave Rapid Thermal
Processing
C.J. Bonifas, K. Thompson, J.H. Booske, R.F. Cooper,
University of Wisconsin, Madison
RTP of Titanium Boride for Applications in Front End Processing
W. Zagodzon-Wosik, R. Ranjit, I. Rusakova, P. van der Heide, Z. Zhang,
University of Houston, J. Bennett, Int. Sematech
Reflectivity of the Silicon Semiconductor Substrate and its
Dependence on the Doping Concentration and Intensity of the
Irradiation
B. Lojek, Atmel Corporation