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12th IEEE International Conference on Advanced Thermal Processing of Semiconductors

RTP 2004

September 28 - 30, 2004

Hilton Portland & Executive Tower, Portland,

Oregon

IEEE Catalog Number:03EX847
ISBN:0-7803-8477-6
Library of Congress:2004104134

 

 

RTP Applications and Technology Options for the sub-45 nm Node
R. MacKnight, P. J. Timans, S.-P Tay, Mattson Technology, Fremont Z. Nenyei, Mattson Thermal Products, Dornstadt

Infusion Processing Solutions for USJ and Localized Strained-Si Using Gas Cluster Ion Beams
J. Hautala, Epion Corporation, Billerica, J. Borland, JOB Technologies, South Hamilton

Dynamic Surface Anneal: Activation Without Diffusion
Dean Jennings, Abhilash Mayur, Vijay Parihar, Haifan Liang, Robert Mcintosh, Bruce Adams, Tim Thomas, Joe Ranish, Aaron Hunter, Teresa Trowbridge, Raman Achutharaman, Randhir Thakur, Applied Materials, Santa Clara

Athermal Annealing of Silicon Implanted Layers: Beyond the Light
B. Lojek, Atmel, Colorado Springs

Leveraging a Low Pressure Thermal Module to Meet the Challenges of Advanced Device Manufacturing
B. Peuse, M. Pfarr, P. J. Timans, Y. Hu,Mattson Technology, Fremont

Integration of a Long Pulse Laser Thermal Processor for Ultra Shallow Junction Formation of CMOS devices
J. Venturini, M. Hernandez, K. Huet, Sopra, Bois-Colombes C. Laviron, LETI Grenoble, H. Akhouayri, Institut Fresnel Marseille, T. Sarnet, J. Boulmer, Université Paris-Sud, Orsay

Optimal Design of Pulse Forming Networks and Flashlamps for Thermal Flash Process
M. Barak, T-Squared Thermal Technologies, Israel

Design of Hot Wall-Based Low Temperature Annealing System and its Process Applications
WooSik Yoo, T. Fukada, T. Murakami, K. Kang, J. Foggiato, WaferMaster, San Jose

NiSi Contact Formation – Process Integration Advantages with Partial Ni Conversion
K. Funk, V. I. Kuznetsov, E. H. A. Granneman, ASM Europe, The Netherlands, X. Pages, ASM Belgium

Advanced Doping and Millisecond Annealing for Ultra-Shallow Junctions for 65nm and Beyond
S. McCoy, J. Gelpey, Vortek Industries, Canada, E. Arevalo, D. Downey, Varian Semiconductor, Gloucester

Formation of Advanced Silicides using Single Wafer Rapid Thermal Furnace in the Temperature Range of 200 șC - 1000 șC
J. Foggiato, WooSik Yoo, T. Fukada, T. Murakami, K. Kang, WaferMaster, San Jose

The effect of a Noble Annealing System on Nickel Silicide Formation
S.-W. Jung, K.-J. Roh, E.J. Jung, H.-S. Kim, S.-H. Cheong, J.-H. Yun, J.-H. Ku, G.-H. Choi, S.-T. Kim, U-I. Chung, J.-T. Moon, Samsung Electronics, Korea

Spike Anneal for NiSi Formation
S. Ramamurthy, N. Tam, B. Ramachandran, T. Dixit, Eun-Ha Kim, H. Forstner, Applied Materials, Santa Clara

Post BF2+ Implant Annealing using Single Wafer Rapid Thermal Furnace
Takashi Fukada,WooSik Yoo, WaferMasters, San Jose

Wet Rapid Thermal Oxidation of Vertical Cavity Surface Emitting Laser Structures with Pyrogenic Steam Generator
T. Gutt, Infineon Technologies, Munich, H. Y. A. Chung, G. J. Feldmeyer, Mattson Thermal Products, Dornstadt

Formation of Ultra-shallow Junctions in 500eV Boron Implanted Si Using Non-melt Laser Annealing
S. Earles, M. Law, K. Jones, J. Frazer, University of Florida, S. Telwar, Verdant Technologies, D. Downey, E. Arevalo, Varian Semiconductor, Gloucester

Alignment Mark Shift due to Thermal Non-uniformity: What is Moving?
B. Lojek, M. Whiteman, K. Starzinski, Atmel, Colorado Springs

In Situ Calibration of Lightpipe Radiometers in Rapid Thermal Processing Between 300 șC to 700 șC
W.A. Kimes, K.G. Kreider, D.C. Ripple, B.K. Tsai, NIST Gaithersburg

Status of NIST Near Infrared Emittance Measurement System
L.M. Hansen, M, Rink, S. N. Mekhontsev, NIST Gaithersburg

Emissivity Compensated Pyrometry for Specular Silicon Surfaces on the NIST RTP Test Bed
B.K. Tsai, D.P. DeWitt, K.G. Kreider, W.A. Kimes, NIST, Gaithersburg, J. Bodycomb, Bellwether Instruments, Columbia

Modeling and Experimental Results for an RTP Light-Pipe Calibration Thermometer Calibration Testbed
K.S. Ball, J. R. Howell, The University of Texas, Austin

RTP Uniformity Improvement through Simulation
C. Tanasa, J. Ranish, A. Hunter, S. Ramamurthy, R. Jallepally, B. Ramachandran, C. Lai, A. Tjandra, N. Tamm, Applied Materials, Santa Clara

Radiative Properties of Silicon-Based Thin Films For Partially Coherent Radiation
K. Fu, P.-T. Hsu, Florida Institute of Technology, Melbourne, Z. Zhang, Georgia Institute of Technology, Atlanta

Investigation of Volumetric Radiation Effects in Lightpipe Thermometry
D. J. Frankman, B. W. Webb, M. R. Jones, BrighamYoung University, Provo

Wafer Temperature Non-uniformity due to Volumetric Absorption of Radiation
B. Lojek, Atmel, Colorado Springs