RTP '93 | RTP '94 | RTP '95 | RTP '96 | RTP '97 | RTP '98 | RTP '99 | RTP '00 | RTP '01 | RTP '02 | RTP '03 | RTP '04 | RTP '05 | RTP '06 | RTP '07 | RTP '08 | RTP '09 | RTP '10 |

15th IEEE International Conference on Advanced Thermal Processing of Semiconductors

RTP 2007

October 2 - 5, 2007
Hotel Baia Verde, Catania,
Italy

IEEE Catalog Number:07EX1783
ISBN:1-4244-1227-7
Library of Congress:2007925112

 

 
Workshop

"Low thermal budget processing for organic and hybrid Si-plastic large area electronics"

  • Low temperature thin film transistor technologies
    Prof. Norbert Frühauf, University of Stuttgart, Germany
    Presentation Slides

  • Low temperature Polysilicon TFT technology for electronics on plastic
    Dr. Guglielmo Fortunato, National Research Council, Italy (CNR)
    Presentation Slides

  • Excimer laser processing in semiconductor industry : from Si to Plastic Electronics
    Dr. Seba Ravesi,STMicroelectronics, Catania, Italy
    Presentation Slides

  • Low temperature plasma deposition of silicon thin films for flexible electronics
    Dr. Pere Roca i Cabarrocas LPICM, Ecole Polytechnique, France
    Presentation Slides


    • RTP'07

  • Aiming for the best matching between Ultra-shallow Doping and mili- to femto- second Activation
    B. Mizuno, Y. Sasaki, Ultimate Junction Technologies Inc., Osaka, Japan
    Presentation Slides

  • Strengths, Weaknesses, Opportunities and Threats of the Post-Si Technologies
    Salvatore Coffa, STMicroelectronics, Catania, Italy
    Presentation Slides

  • Applied Materials' Product Portfolio and Roadmap
    A. Hunter, J. Zelenko, R. Mani, Applied Materials, Sunnyvale, CA

  • A Review of Process-Induced Strain Techniques for Advanced Logic Technologies
    M. Wiatr, Th. Feudel, A. Wei, A. Mowry, R. Boschke, P. Javorka, A. Gehring, T. Kammler,
    M. Lenski, K. Frohberg, R. Richter, M. Horstmann, D. Greenlaw
    AMD Saxony, Dresden, Germany
    Presentation Slides

  • Excimer Laser Annealing of Ion-implanted Silicon: Dopant Activation, Diffusion and Defect Formation
    E. V. Monakhov, B. G. Svensson, University of Oslo, Norway
    A. La Magna, P. Alippi, M. Italia, V. Privitera, IMM-CNR, Catania, Italy
    G. Fortunato, L. Mariucci, IFN-CNR, Rome, Italy
    F. Tumisto, K. Kuitunen, Helsinky University of Technology, Finland
    Presentation Slides

  • Laser Activated Radical Generation in Rapid Thermal Processing
    I. Eisele, A. Aßmuth T. Sulima, Universität der Bundeswehr München, München, Germany
    Presentation Slides

  • Millisecond Processing Beyond Chip Technology: From Electronics to Photonics
    W. Skorupa, W. Anwand, M. Posselt, S. Prucnal, L. Rebohle, M. Voelskow, S. Zhou
    Research Center Rossendorf, Dresden, Germany
    R. A. McMahon, M. Smith, University of Cambridge, Cambridge, U.K.
    T. Gebel, W. Hentsch, R. Fendler, FHR GmbH, Ottendorf-Okrilla, Germany
    T. Lüthge, Degussa GmbH, Marl, Germany
    A. Satta, IMEC, Leuven, Belgium
    T. Moe Børseth, A. Yu. Kuznetsov, B. G. Svensson, University of Oslo, Oslo, Norway

  • Microwave Annealing for Low Temperature Activation of As in Si
    J. E. Kowalski, J. M. Kowalski, DSG Technologies, Morgan Hill, CA
    B. Lojek, ATMEL, Colorado Springs, CO
    Presentation Slides
  • Sacrifical Deuterium Passivation for Improved Interface Engineering in Gate Stack Processing
    A. E. Pap, G. Battistig, C. Dücso, I. Bársony, K. Kamarás
    Hungarian Academy of Sciences, Budapest, Hungary
    Z. Nenyei, W. Dietl, C. Kirchner, Mattson Thermal Products, Dornstadt, Germany
    Presentation Slides

  • New Tool and New process for Ultar High Performance Metal/High-K Gate Dielectric Stack for Sub 45 nm CMOS Manufacturing
    A. Venkateshan, R. Singh, K. H. Pole, Clemson University, Clemson, SC
    Presentation Slides

  • Effect of Thermal Annealing on the Electrically Active Profiles and Surface Roughness in Multiple Al Implanted 4H-SiC
    F. Giannazzo , F. Roccaforte , V. Raineri, CNR-IMM, Catania, Italy
    D. Salinas, STMicroelectronics, Catania, Italy
    Presentation Slides

  • Implants of ClusterBoron® and ClusterCarbonTM Materials for USJ Applications – a Study with Various Anneal Techniques
    K. Sekar, W. Krull, T. Horsky, SemEquip, Billerica, MA
    J. Chan, S. McCoy, J. Gelpey, Mattson Technology Canada, Vancouver, Canada
    Presentation Slides

  • Boron Diffusion and Electrical Activation in Pre-amorphized Si Enriched with Fluorine
    G. Impellizzeri1 , S. Mirabella1 , M. G. Grimaldi1 , F. Priolo1, F. Giannazzo2, V. Raineri2, E. Napolitani3, A. Carnera3
    1 MATIS - CNR-INFM and Dipartimento di Fisica ed Astronomia, Università di Catania, Catania, Italy
    2 CNR-IMM, Catania, Italy
    3 MATIS - CNR-INFM and Dipartimento di Fisica, Università di Padova, Padova, Italy
    Presentation Slides

  • Boron pile-up Phenomena During Ultra Shallow Junction Formation
    M. Ferri, S. Solmi, Institute of Microelectronics and Microsystems CNR-IMM, Bologna, Italy
    D. Giubertoni, M. Bersani, Fondazione Bruno Kessler – IRST, Trento, Italy
    J. J. Hamilton, M. Kah, N.E.B. Cowern, K. Kirkby, University of Surrey, Surrey, UK
    E.J.H. Collart, Applied Materials, Horsham, UK
    Presentation Slides

  • Ultra-Shallow Dopant Diffusion from Pre-Deposited RPCVD Monolayers of Arsenic and Phosphorus
    M. Popadic, L.K. Nanver, T.L.M. Scholtes,
    Laboratory of ECTM, DIMES, Delft University of Technology, Delft, The Netherlands
    Presentation Slides

  • Virtual Metrology in RTP with WISR
    W. Aderhold, I. Iliopoulos, A. Hunter, Applied Materials, Sunnyvale, CA
    Presentation Slides

  • Effect of He Induced Nanovoid on B Implanted Si: The Microscopic Mechanism
    E. Bruno, S. Mirabella, F. Priolo, MATIS CNR-INFM Università di Catania, Catania, Italy
    F. Giannazzo, V. Raineri, CNR-IMM, Catania, Italy
    E. Napolitani, MATIS CNR-INFM Università di Padova, Padova, Italy
    Presentation Slides

  • Widening of FUSI RTP Process Window by Spike Anneal
    A. Lauwers, S. Mertens, P. Absil, T. Chiarella, T. Hoffmann, S. Kubicek, J. F. de Marneffe, B. Brijs, C. Vrancken, S. Biesemans, J. Kittl
    IMEC, Leuven, Belgium
    J.A. Kittl, Assignee from Texas Instruments at IMEC
    K. Verheyden, K. Vanormelingen, ASM Belgium, IMEC
    E. Granneman, ASM Europe, Almere, The Netherlands
    Presentation Slides

  • Atomistic Modeling of Carbon Co-Implants and Rapid Thermal Anneals in Silicon
    N. Zographos, Synopsys Switzerland LLC, Zurich, Switzerland
    I. Martin-Bragado, Synopsys, Inc. Mountain View, CA
    Presentation Slides

  • Role of Temperature on the Morphology and the Chemical Composition of C-based Nanostructures: from Nanocolumns to Nanotubes
    S. Scalese1, V. Scuderi1, F. Simone2, A. Pennisi1, G. Compagnini3 V. Privitera1
    1 CNR-IMM, Catania, Italy
    2 Dipartimento di Fisica e Astronomia, Università di Catania, Catania,Italy
    3 Dipartimento di Scienze Chimiche, Università di Catania, Catania, Italy
    Presentation Slides

  • Control of Source and Drain Extension Phosphorus Profile by Using Carbon Co-Implant
    C. I. Li, R. Liu, M. Chan, T.F. Hsiao, C. L. Young, S. F. Tzou
    United Microelectronics Corporation, Taiwan, R.O.C.

  • Pattern-dependent Heating of 3D Structures
    E. Granneman1, X. Pagès2, H. Terhorst1, K. Verheyden3, K. Vanormelingen3 , E. Rosseel4
    1 ASM Europe B.V., Almere, The Netherlands
    2 ASM France, Grenoble, France
    3 ASM Belgium, Leuven, Belgium
    4 IMEC, Leuven, Belgium
    Presentation Slides

  • Nodal and Spatial Analysis for a Compact Thermal Modeling Methodology
    S. Krishnamoorthy, M. H. Chowdhury, University of Illinois, Chicago, IL

  • Thermal Stability of Pt and C-doped NiSi Films
    V. Machkaoutsan1, X. Pagès2, M. Bauer3, S. Thomas3, S. Mertens4, K. Verheyden1
    K. Vanormelingen1, E. Granneman5
    1 ASM Belgium, Leuven, Belgium
    2 ASM France, Grenoble, France
    3 ASM America, Phoenix, AZ
    4 IMEC, Leuven, Belgium
    5ASM Europe B.V., Almere, The Netherland
    Presentation Slides

  • Temperature Dependent Reaction of Thin Ni-silicide Trans-rotational Layers on [001]Si
    A. Alberti, C. Bongiorno, P. Alippi, A. La Magna, C. Spinella, E. Rimini
    CNR-IMM, Catania, Italy
    Presentation Slides

  • Characterization of Nickel Silicides Produced by Millisecond Anneals
    B. Adams, D. Jennings, K. Ma, A. J. Mayur, S. Moffat, S. G. Nagy, V. Parihar
    Applied Materials, Sunnyvale, CA
    Presentation Slides

  • Effects of Thermal Annealing in Ion-implanted Gallium Nitride
    F. Iucolano1, F. Giannazzo1, F. Roccaforte1, V. Puglisi2, M. G.Grimaldi3 ,V. Raineri1
    1 CNR-IMM, Catania, Italy
    2 STMicroelectronics, Catania, Italy
    3Dipartimento di Fisica e Astronomia, Università di Catania, Catania,Italy
    Presentation Slides

  • Wafer Level Curing of Polymer Dielectrics
    R. L. Hubbard, R. S. Garard, Lambda Technologies, Inc., Morrisville, NC
    Presentation Slides

  • The Reflectivity Enhancement of Ni/Ag/M/Au Ohmic Contact for Flip-Chip Light-Emitting Diode Applications
    L-B. Chang, C-C. Shuie, M-J. Jeng, Chang-Gung University, Taiwan, R.O.C.
    Presentation Slides

  • 32nm Node USJ Implant & Annealing Options
    John Borland, J.O.B. Technologies, Aiea, Hawaii
    Presentation Slides

  • Advanced Activation and Deactivation of Arsenic Implanted Ultra-shallow Junctions Using Flash and Spike + Flash Annealing
    W. Lerch1, S. Paul1, J. Niess1, S. McCoy2, J. Gelpey2, D. Bolze3 F. Cristiano4, F. Severac4 A. Martinez5, P. Pichler5
    1 Mattson Thermal Products, Germany
    2 Mattson Technology Canada, Canada
    3 IHP, Frankfurt/Oder, Germany
    4 LAAS/CNRS, Toulouse, France
    5 Fraunhofer-IISB, Erlangen, Germany
    Presentation Slides

  • Characteristics of Silicon Oxide Gate MOS Capacitors Formed by Rapid Thermal Oxidation and Annealing
    F. A. Cavarsan, A. Toma, J. Godoy Fo, J. A. Diniz, I. Doi
    DSIF/FEEC and CCS/UNICAMP, Campinas, Brazil

  • Characterization of Nitrided Gate Oxides under Manufacturing Conditions
    R. Hayn, O. Storbeck, Qimonda, Dresden, Germany
    Presentation Slides

  • High Reliable Rapid Thermal Selective Gate Re-oxidation Process of Advanced Metal Gate Stacks with Tungsten Electrode
    J. Niess, C. Kirchner, W. Dietl, H.-J. Meyer, B. Nadig, W. Lerch Mattson Thermal Products, Dornstadt, Germany
    I. Costina, R. Kurps, D. Bolze, IHP, Frankfurt (Order), Germany
    Presentation Slides

  • Selective Rapid Thermal Oxidation of Silicon vs. Tungsten using Oxygen in Hydrogen
    M. Ripley1, R. Balasubramanian1, N. Tam1, Y. Yokota1, A. B. Lee2, T. J. Kim3, C. H. Lee3
    1 Applied Materials, Sunnyvale, CA
    2 Hynix Semiconductor Inc., Kyoungki-do, Korea
    3 Applied Materials Korea, Kyonggi-do, Korea
    Presentation Slides

  • Thermal Processing with Maximized Simplicity and Energy Efficiency
    I. J. Malik, M. Ouaknine, T. Fukada, Woo Sik Yoo, WaferMasters, San Jose, CA
    Presentation Slides

  • Bi-directional Reflectivity of Surfaces with Anisotropic Roughness on the Wafer Backside
    Pei-feng Hsu, R. Buchanan, Florida Institute of Technology, Melbourne, FL

  • Wafer Temperature Measurement and Control During Laser Spike Annealing
    S. Chen1, J. Hebb1, A. Jain2, S. Shetty1,Yun Wang1
    1 Ultratech Inc., San Jose, CA
    2 Texas Instruments, Dallas, TX

  • Defect Generation and Evolution in Laser Processing of Si
    A. La Magna, V. Privitera, G. Mannino, CNR-IMM, Catania, Italy
    G. Fortunato, M. Cuscuna, CNR-IFN, Rome, Italy
    B. G. Svensson, E. Monakhov, University of Oslo, Oslo, Norway
    K. Kuitunen, J. Slotte, F. Tuomisto, Helsinky University of Technology, Espoo, Finland
    Presentation Slides

  • Laser Anneal Process for the 45-nm CMOS Technology Platform
    M. Bidaud, H. Bono, C. Chaton, CEA LETI, Grenoble, France
    B. Dumont, V. Huard, P. Morin, L. Proencamota, R. Ranica, G. Ribes
    ST Microelectronics, Crolles, France
    Presentation Slides

  • Silicon Laser Annealing by a Two-pulse Laser System with Variable Pulse Offsets
    V. Gonda, J. Slabbekoorn, L. K. Nanver
    Delft University of Technology, DIMES-ECTM, Delft, The Netherlands
    Presentation Slides

  • Laser Annealing of Power Devices
    D. Friedrich, H. Bernt, H. Hanssen, Fraunhofer Institute for Silicon Technology, Itzehoe, Germany
    P. Oesterlin, H. Schmidt, INNOVAVENT GmbH, Göttingen, Germany
    Presentation Slides

  • Laser Annealing of a-Si for the Realization of Polycrystalline Si Film on Plastic Substrates
    F. Mangano, L. Caristia, N. Costa, M. Camalleri, S. Ravesi, ST-Microelectronics, Catania, Italy
    S. Scalese, S. Bagiante, V. Privitera, CNR-IMM, Catania, Italy
    Presentation Slides

  • Investigation of Excimer Laser Annealing of Si using Photoluminescence at Room Temperature
    H. Bourdon, A. Halimaoui, D. Dutartre, STMicroelectronics, Crolles, France
    J. Venturini, Excico, Gennevilliers, France
    F. Gonzatti, CEA-LETI, Grenoble, France
    Presentation Slides

    • Lasers Solutions for Annealing
    B. Turk2 , R. Paetzel1, J. Brune1, S. Govorkov2 , F. Simon2
    1 Coherent GmbH, Goettingen, Germany
    2 Coherent Inc., Santa Clara, CA
    Presentation Slides

    New Approaches to Ultra Shallow Junction Formation by Molecular Implantation and Millisecond Laser Spike Annealing
    N. Variam, A. Kontos, E. Arevalo, C. Hatem
    Varian Semiconductor Equipment Associates, Gloucester, MA
    S. Chen, Y. Wang, Ultratech, San Jose, CA
    Presentation Slides

  • Highly Active Junctions Formed in Crystalline Si by Infrared Laser Annealing
    G. Mannino, A. La Magna, V. Privitera, CNR-IMM, Catania, Italy
    J. S. Christensen, L. Vines, B. G. Svensson, University of Oslo, Oslo, Norway
    Presentation Slides

  • Excimer Laser Annealing for Low-Temperature Polysilicon Thin Film Transistors Fabrication on Plastic Substrates
    G. Fortunato, A. Pecora, L. Maiolo, M. Cuscunà, D. Simeone, A. Minotti, L. Mariucci
    Istituto di Fotonica e Nanotecnologie (IFN), Rome, Italy
    Presentation Slides

  • Impact of Sub-melt Laser Annealing on Si1-xGex Source/Drain Defectivity
    E. Rosseel1, J. P. Lu2, A. Hikavyy1, P. Verheyen1, T. Hoffmann1, R. Loo1, P. Absil1, R. Mc Intosh3, S. B. Felch3, R. Schreutelkamp4
    1 IMEC, Leuven, Belgium
    2 Texas Instruments assignee at IMEC, Leuven, Belgium
    3 Applied Materials, Sunnyvale, CA
    4 Applied Materials Belgium, Leuven, Belgium
    Presentation Slides

  • Effect of Low Temperature Annealing Prior to Non-melt Laser Annealing in Ultra-shallow Junction Formation
    T. Fukaya1, R. Yamada1, Y. Tanaka1, S. Matsumoto1, T. Suzuki2, G. Fuse2, T. Kudo3, S. Sakuragi3
    1 Keio University, Kanagawa, Japan
    2 SEN Corporation, SEN Corporation, Tokyo, Japan
    3 Sumitomo Heavy Industries Ltd., Kanagawa, Japan
    Presentation Slides

  • First Quantitative Observation of Local Temperature Fluctuation in Millisecond Annealing
    T. Kubo1, T. Sukegawa1, E. Takii2, T. Yamamoto2, S. Sato2 and M. Kase1
    1 Fujitsu Ltd., 2 Fujitsu Laboratories Ltd., Tokyo, Japan
    Presentation Slides

    •