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16th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2008

September 30 - October 3, 2008
The Platinum Hotel and Spa, Las Vegas, NV


IEEE Catalog Number:CFP08TPS-PRT (Print)
IEEE Catalog Number:CFP08TPS-CDR (CD)
ISBN:978-1-4244-1959-0
Library of Congress:207909453

 

 

 IEEE RTP'08

  • Recent Advances in Stress and Activation Engineering for High-Performance SOI Logic Transistors
    T. Feudel, M. Horstmann, AMD Saxony LLC & Co. KG
    Presentation Slides

  • High-Performance Bulk CMOS Technology with Millisecond Annealing and Strained Si
    T. Sugii, K. Ikeda, T. Miyashita, FUJITSU Laboratoties LTD.

  • New Metrology for Annealing of USJ and Thin Films
    M. I. Current, Frontier Semiconductor
    J. O. Borland, J.O.B. Technologies
    Presentation Slides

  • Laser Spike Annealing and its Application to Leading-edge Logic Devices
    Y. Wang, S. Chen, M. Schen, X. Wang, S. Zhou, A. Hawryluk, J. Hebb, D. Owen
    Ultratech, San Jose, CA
    Presentation Slides

  • Optimization of Diffusion, Activation and Damage Annealing in Millisecond Annealing
    P. J. Timans1, Yao Zhi Hu1, J. Gelpey2, S. McCoy2, W. Lerch3, S. Paul3, D. Bolze4, H. Kheyrandish5, J. Reyes6, S. Prussin6
    1Mattson Technology, Inc., Fremont, California, USA
    2Mattson Technology Canada, Inc.,Vancouver, Canada
    3Mattson Thermal Products GmbH, Dornstadt, Germany
    4IHP, Frankfurt (Oder), Germany
    5CSMA Ltd., Stoke-on-Trent, UK
    6University of California, Los Angeles, CA
    Presentation Slides

  • Effect of Wafer Thickness on Sheet Resistance During Spike Anneal
    S. Catlett, J. F. Shepard, Jr.
    IBM 300mm Manufacturing, Hopewell Junction, NY
    Presentation Slides

  • Ellipsometry of Ion Implantation Induced Damage
    P. Petrik, T. Lohner, O. Polgár, M. Fried
    Research Institute for Technical Physics and Materials Science, Budapest, Hungary
    Presentation Slides

  • Optical Interference Effect on Chip’s Temperature Distribution in the Optical Annealing Process
    H. Ohno1, T. Itani2, H. Yoshinori1
    1Corporate Research and Development Center, Toshiba Corporation
    2Process Manufacturing Engineering Center, Toshiba Corporation
    Presentation Slides

  • Annealing Behavior of ClusterCarbonTM Implants
    W. Krull, K. Sekar, SemEquip, Billerica, MA
    J. Chan, S. McCoy, J. Gelpey, Mattson Technology Canada, Vancouver, Canada
    Presentation Slides

  • Plasma Doping Control by Mass Metrology
    J-L. Everaert1, G. Zschaetzsch1, E. Vecchio1, W. Vandervorst1,2 L. Cunnane3
    1IMEC, Leuven, Belgium
    2Instituut voor Kern-en Stralingsfysika, K.U. Leuven, Belgium
    3Metryx Ltd., Bristol UK
    Presentation Slides

  • Temperature Measurement in RTP: Past and Future
    B. Adams, Applied Materials, Santa Clara, CA
    Presentation Slides

  • Characterization of Deformation Induced by Micro-Second Laser Anneal Using CGS Interferometry
    D. M. Owen, Y. Wang, A. Hawryluk, S. Zhou, J. Hebb, Ultratech Inc., San Jose, CA
    Presentation Slides

  • Impact of Multiple Sub-melt Laser Scans on the Activation and Diffusion of Shallow Boron Junctions
    E. Rosseel1, W. Vandervorst1,2, T. Clarysse1, J. Goossens1, A. Moussa1 R. Lin3, D.H. Petersen3,4, P.F. Nielsen3, O. Hansen4, N.S. Bennett5, N.E.B. Cowern5 1IMEC, Leuven, Belgium 2KU Leuven, Dept. of Physics-IKS, Leuven, Belgium
    3Capres A/S, Scion-DTU, Kongens Lyngby, Denmark
    4DTU Nanotech - Dept. of Micro and Nanotechnology,Technical University of Denmark, Lyngby, Denmark
    5School of Electrical, Electronic and Computer Engineering,University of Newcastle upon Tyne, Newcastle upon Tyne, UK
    Presentation Slides

  • Ultra Shallow Doping by Excimer laser Drive-In of RPCVD Surface Deposited Arsenic Monolayers
    M. Popadic, Lis K. Nanver, C. Biasotto, V. Gonda, J. van der Cingel
    Laboratory of ECTM, DIMES, Delft University of Technology, The Netherlands
    Presentation Slides

  • Enhancing Tensile Stress and Source/Drain Activation with Si:C with Innovations in Ion Implant and Millisecond Laser Spike Annealing
    H. Maynard, C. Hatem, H.-J. Gossmann, Y. Erokhin, N. Variam
    Varian Semiconductor Equipment Associates, Gloucester, MA
    S. Chen, Y. Wang, Ultratech Inc. San Jose, CA
    Presentation Slides

  • Emission Feedback Control System for Sub-Millisecond Laser Spike Anneal
    J. T. McWhirter, D. Gaines, P. Zambon, Ultratech Incorporated, San Jose, California
    Presentation Slides

  • Control of Laser Induced Interface Traps with In-line Corona Charge Metrology
    J-L. Everaert1, E. Rosseel1, C. Ortolland1, M. Aoulaiche1, T.Hoffmann1, T. Pavelka2, E. Don3
    1IMEC, Leuven, Belgium
    2Semilab, Budapest, Hungary
    3SemiMetrics Ltd., Kings Langley,UK
    Presentation Slides

  • Free Form Microlens Systems Enable New Laser Beam Profiles for RTP
    D. Hauschild, P. Harten, L. Aschke, V. Lissotschenko
    LIMO Lissotschenko Mikrooptik GmbH, Dortmund, Germany
    Presentation Slides

  • Laser Annealing of Double Implanted layers for IGBT Power Devices
    C. Sabatier, S. Rack, H. Beseaucčle, J. Venturini,Excico, Gennevilliers, France
    T. Y. Hoffmann, E. Rosseel, J. Steenbergen, IMEC, Leuven Belgium
    Presentation Slides

  • Origins of Local Temperature Variation During Spike Anneal and Millisecond Anneal
    R. Beneyton1, A. Colin1,2, H. Bono1,3,F. Cacho1, M. Bidaud1, B. Dumont1, P. Morin1, K. Barla1
    1ST Microelectronics, Crolles Cedex, France
    2InESS (CNRS/Université Louis Pasteur) Strasbourg, France
    3CEA LETI Grenoble, FRANCE
    Presentation Slides

  • Total Temperature Fluctuation of a Pattern Wafer in Millisecond Annealing
    T. Kubo, T. Sukegawa, M. Kase, Fujitsu Microelectronics Ltd.
    Presentation Slides

  • Low temperature Microwave Annealing of S/D
    B. Lojek, ATMEL Corporation, Colorado Springs, CO
    Presentation Slides

  • Wavelength and Polarization Dependent Absorption Effects in Millisecond Annealing of Metal Gate Structures
    D. P. Ceperley, A. R. Neureuther
    Dept. of Electrical Engineering and Computer Sciences, Univ. of California, Berkeley
    A. Hawryluk, X. Wang, M. Shen, Y. Wang, Ultratech, San Jose, CA
    Presentation Slides

  • Si Surface Preparation and Passivation by Heavy Water Vapor
    Andrea Edit Pap1, P. Petrik1, B. Pecz1, G. Battistig1, I. Bársony1, Z. Nényei2, Z. Szekrenyes3, K. Kamarás3, Z. Schay4
    1Research Institute for Technical Physics and Materials Science MFA,Hungarian Academy of Sciences, Budapest, Hungary
    2Mattson Thermal Products, Dornstadt, Germany
    3Research Institute for Solid State Physics and Optics SZFKI,Hungarian Academy of Sciences, Budapest, Hungary
    4Research Institute of Isotopes,Hungarian Academy of Sciences, Budapest, Hungary
    Presentation Slides

  • Quality and Reliability of Oxide by Low Thermal Budget Rapid Thermal Oxidation
    Y. Cho, Y. Yokota, C. Olsen, A. Tjandra, Kai Ma, V. Nguyen
    Applied Materials, Santa Clara, CA
    Presentation Slides

  • Thermal and Non-thermal Kinetics of Defect and Dopant in Si
    A. La Magna, G. Fisicaro, G. Mannino and V. Privitera, CNR-IMM, Catania, Italy
    G. Piccitto, Department of Physics and Astronomy, University of Catania, Catania, Italy
    B. G. Svensson, L. Vines, Department of Physics, Physical Electronics, University of Oslo, Oslo, Norway
    Presentation Slides

  • Parasitic Resistance and Leakage Reduction by Raised Source/Drain Extension Fabricated with Cluster Ion Implantation and Millisecond Annealing
    K. Yako1, T. Yamamoto1, K. Uejima1, T. Ikezawa2, M. Hane1
    1LSI Fundamental Research Laboratory, NEC Electronics Corporation
    2NEC Informatec Systems, Ltd., Sagamihara-city, Kanagawa, Japan
    Presentation Slides

  • RTA and FLA of Ultra-Shallow Implanted Layers in Ge
    C. Wündisch, M. Posselt, W. Anwand, B. Schmidt, R. Grötzschel, A.Mücklich, S. Gemming, W. Skorupa
    Forschungszentrum Dresden-Rossendorf,Institute of Ion Beam Physics and Materials Research, Dresden, Germany
    T. Clarysse, E. Simoen, IMEC, Leuven, Belgium
    Presentation Slides

  • High Precision Micro-Scale Hall Effect Characterization Method using in-line Micro Four-Point Probes
    D.H. Petersen1,2, O. Hansen2,3, T. Clarysse4, J. Goossens4, E. Rosseel4, W. Vandervorst4,5, R. Lin2, P.F. Nielsen2 1DTU Nanotech - Dept. of Micro and Nanotechnology,Technical University of Denmark, Lyngby, Denmark
    2CAPRES A/S, Lyngby, Denmark 3CINF - Centre for Individual Nanoparticle Functionality,Technical University of Denmark, Lyngby, Denmark
    4IMEC, Leuven, Belgium
    5KU Leuven, Dept. of Physics-IKS, Leuven, Belgium
    Presentation Slides

  • Si Spontaneous Emission During RTP and its Impact on Low-Temperature Pyrometry
    J.P. Li, A. Hunter, R. Ramanujam, Applied Materials, Santa Clara, CA
    Presentation Slides

  • Wafer Temperature Measurement in Conduction-Based RTP Systems
    E. Granneman1, X. Pagčs2, P. Vermont2
    1ASM Europe B.V., Almere, The Netherlands
    2ASM France, Grenoble, France
    Presentation Slides

  • Investigation of Microwave Annealed Implanted Layers with TWIN Metrology System
    B. Lojek, Atmel Corporation, Colorado Springs, CO
    H. D. Geiler, JenaWave GmbH, Jena, Germany
    Presentation Slides

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