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17th IEEE International Conference on Advanced Thermal Processing of Semiconductors - RTP2009

September 29 - October 2, 2009
Marriott Hotel Albany, NY


IEEE Catalog Number: CFP09TPS-PRT (Print)
IEEE Catalog Number: CFP09TPS-CDR (CD)
ISBN: 978-1-4244-3815-0
ISSN: 1944-026X

 

 

 IEEE RTP'09

  • Expanded Application Space for Laser Spike Annealing of CMOS Devices
    J. Hebb, Y. Wang, S. Chen, M. Shen, S. Zhou, X. Wang, D. Owen
    Ultratech, San Jose, CA

    Presentation Slides

  • Advances in Si & Ge Millisecond Processing: From Silicon-on-Insulator to Superconducting Ge
    W. Skorupa1, C.Wündisch1, M. Posselt1, V. Heera1, T. Herrmannsdörfer1,
    D. Buca2, S. Mant2, W. Anwand3,T. Gebel4
    1Institute of Ion Beam Physics & Materials Research,Forschungszentrum Dresden-Rossendorf, Dresden, Germany
    2Institute of Bio-and Nanosystems, Forschungszentrum Jülich, Jülich, Germany
    3FHR GmbH, Ottendorf-Okrilla, Germany
    4DTF Technology GmbH i.G., Dresden, Germany

    Presentation Slides

  • Application of laser annealing in the EU FP6 project D-Dot FETs
    L.K. Nanver, C. Biasotto, V. Jovanovic, J. van der Cingel, S. Milosavljevic
    Delft University of Technology, Delft, The Netherlands


  • Application and Advantages of Larger Boron Cluster Ions for 22nm and Beyond Technology Nodes
    K. Sekar1, W.Krull1,J. Chan2, S. McCoy2, J. Gelpey2
    1SemEquip, N. Billerica, MA
    2Mattson Technology Canada, Vancouver, Canada

    Presentation Slides

  • 22nm Node p+ Junction Scaling Using B36H44 and Laser Annealing With or W/O PAI
    J. Borland1, M. Tanjyo2, N. Hamamoto2, T. Nagayama2
    S. Muthukrishnan3, J. Zelenko3, I. Mirshad4, W. Johnson4, T. Buyuklimanli5
    1J.O.B. Technologies, Aiea, HI
    2Nissin Ion Equipment, Kyoto, Japan
    3Applied Materials, Sunnyvale, CA
    4KLA-Tencor, San Jose, CA 5EAG, East Windsor, NJ

    Presentation Slides

  • Damage Evolution in Implanted Silicon by Pulsed Excimer Laser Annealing
    G. Fisicaro1,2, A. La Magna2, G. Piccitto1BR> V. Privitera2, K. Huet3, J. Venturini3, H. Besaucele3
    1Department of Physics and Astronomy, University of Catania, Catania, Italy
    2CNR IMM, Catania, Italy
    3Excico, Gennevilliers, France

    Presentation Slides

  • 22nm Node n+ SiC Stressor Using Deep PAI+C7H7+P4 With Laser Annealing
    J. Borland1, M. Tanjyo2, S. Muthukrishnan3, J. Zelenko3, I. Mirshad4, W. Johnson4
    T. Buyuklimanli5, S. Robie5, H. Itokawa6, I. Mizushima6, K. Suguro6
    1J.O.B. Technologies, Aiea, HI
    2Nissin Ion Equipment, Kyoto, Japan
    3Applied Materials, Sunnyvale, CA
    4KLA-Tencor, San Jose, CA
    5EAG, Sunnyvale, CA
    6Toshiba Corporation, Yokohama, Japan

    Presentation Slides

  • Impact of CMOS Device Integration on LSA Non-Uniformity for Logic Devices
    S. Shetty, Y. Wang, J. Hebb, J. McWhirter, D. Owen, P. Bischoff, J. Willis, V. Le
    Ultratech Inc., San Jose, CA

    Presentation Slides

  • Impact of Pattern Effects on Reflectance and Stress Distribution for Laser Spike Annealing and Broad-based Flash Lamp Technologies
    S. Shetty, J. Mileham, D.M. Owen, J. Hebb, Y. Wang
    Ultratech Inc., San Jose, CA

    Presentation Slides

  • Experimental and Theoretical Analysis of Dopant Activation in Thin Double Implanted Silicon by Pulsed Excimer Laser Thermal Annealing
    K. Huet1, C. Boniface1, J. Venturini1, H. Besaucele1, M. Schuhmacher2
    N. Variam3, G. Fisicaro4, A. La Magna4, V. Privitera4
    1Excico, Gennevilliers, France
    2CAMECA, Gennevilliers, France
    3Varian Semiconductor Equipment Associates, Gloucester, MA
    4CNR-IMM Sezione Catania, Catania, Italy

    Presentation Slides

  • Millisecond Annealing of High-Performance SiGe HBTs
    D. Bolze1, B. Heinemann1, J. Gelpey2, S. McCoy2, W. Lerch3
    1IHP Frankfurt(Order), Germany
    2Mattson Technology Canada, Vancouver, Canada
    3Mattson Thermal Products, Germany

    Presentation Slides

  • Formation of Si-based Light-emitting Structures by Ion Implantation and Pulsed Treatments
    R.M. Bayazitov, R.I. Batalov
    Kazan Physical-Technical Institute of RAS, Kazan, Russia

    Presentation Slides

  • Study of Sub-melt Laser Damage Anealing using Therma-Probe
    E. Rosseel1, J. Bogdanowicz1,2, T. Clarysse1, W. Vandervorst1,2
    A. Salnik3, S-H. Han3, L. Nicolaides3
    1IMEC, Leuven, Belgium
    2Instituut voor Kern- en Stralingsfysika, KU Leuven, Belgium
    3KLA-Tencor Corp., Milpitas, CA

    Presentation Slides

  • Activation of in Implanted Si for Backside Processing by Ultra-fast Laser Thermal Annealing:
    Energy Homogenity and Micro-scale Sheet Resistance
    K. Huet1, C. Boniface1, J. Venturini1, H. Besaucele1, N. Variam2
    R. Lin3, A. Jensen3, P.F. Nielsen3, A. La Magna4, V. Privitera4
    1Excico, Gennevilliers, France
    2Varian Semiconductor Equipment Associates, Gloucester, MA
    3CAPRES A/S, Lyngby, Denmark
    4CNR-IMM Sezione Catania, Catania, Italy

    Presentation Slides

  • The Heating and Photoionization of Silicon Structures at Laser Treatment
    R.M. Bayazitov
    Kazan Physical-Technical Institute of RAS, Kazan, Russia

    Presentation Slides

  • Time Evolution of Phosphorus Dose Loss due to Interface Segregation
    Ruey-Dar Chang, Jung-Ruey Tsai, Chia-Chi Ma
    Department of Electronic Engineering, Chang Gung University, Taoyuan, Taiwan

    Presentation Slides

  • Backside-Activation Technique of Power Device IGBTs by a Microsecond-Pulsed Green Laser
    Y. Arai1, T. Kudo1, K. Sano1, H. Schmidt2, P. Oesterlin2
    1Japan Steel Works, LTD., Yokohama Japan
    2Innovavent GmbH, Goettingen Germany

    Presentation Slides

  • Very High Magnification Optical Characterization of Global and Local Distortion of Si Wafers after Laser Spike Annealing
    Woo Sik Yoo, T. Ueda, T. Ishigaki, K. Kang
    WaferMasters, San Jose, CA

    Presentation Slides

  • Monitoring of Local and Global Temperature Non-uniformities by means of Therma-Probe and Micro Four-Point Probe Metrology
    E. Rosseel1, D. H. Petersen2,3, F. W. Osterberg2, O. Hansen2, J. Bogdanowicz1,4
    T. Clarysse1, W. Vandervorst1,4, C. Ortolland1, T. Hoffman1, P. Chan5, A. Salnik5, L. Nicolaides5
    1IMEC, Leuven, Belgium
    2DTU Nanotech - Dept. of Micro and Nanotechnology, Technical University of Denmark, Lyngby, Denmark
    3CAPRES A/S, Scion-DTU, Lyngby, Denmark
    4Inst. voor Kern- en Stralingsfysica, K. U. Leuven, Leuven, Belgium
    5KLA-Tencor Corp., Milpitas, CA

    Presentation Slides

  • Diffusion and Activation of Boron and Phosphorus in Preamorphized and Crystalline Germanium using Ultra Fast Spike Anneal
    V. Mazzocchi1, X. Pages2, M. Py1, J.P. Barnes1, K. Vanormelingen2, L. Hutin1, V. Delaye1, P. Vermont2, M. Vinet1, C. Le Royer1, K. Yckache1
    1CEA-LETI-MINATEC F38054 Grenoble, France
    2ASM Europe B.V., Almere, The Netherlands

    Presentation Slides

  • Boron and Phosphorus Dopant Activation in Germanium using Laser Annealing with and without Preamorphized Implant
    V. Mazzocchi1, C. Sabatier2, M. Py1, K. Huet2, C. Boniface2, J-P. Barnes1, L. Hutin1,
    V. Delaye1, D. Morel1, M. Vinet1, C. Le Royer1, J. Venturini2, K. Yckache1
    1CEA, LETI, MINATEC, F38054 Grenoble, France
    2EXCICO, Gennevilliers, France

    Presentation Slides

  • Homogeneity Check of Ion Implantation in Silicon by Wide-angle Ellipsometry
    M. Fried, G. Juhasz, P.Petrik, N. Q. Khanh, G. Battistig
    MFA, Research Institute for Technical Physics and Materials Science, Budapest, Hungary

    Presentation Slides

  • Accuracy of Micro Four-point Probe Measurements on Inhomogeneous Samples: A Probe Spacing Dependence Study
    Fei Wang1, D. H. Petersen1,2, F. W. Osterberg1, Ole Hansen1,3
    1Department of Micro- and Nanotechnology, Technical University of Denmark, Lyngby, Denmark
    2Capres A/S, Scion-DTU, Lyngby, Denmark
    3Danish National Research Foundation’s Center for Individual Nanoparticle Functionality (CINF),Technical University of Denmark, Lyngby, Denmark

    Presentation Slides

  • Accurate Micro Hall Effect Measurements on Scribe Line Pads
    F. W. Osterberg1, D.H. Petersen1,2, F. Wang1, E. Rosseel4, W. Vandervorst4,5, O. Hansena1,3
    1DTU Nanotech - Dept. of Micro and Nanotechnology, Technical University of Denmark, Lyngby, Denmark
    2CAPRES A/S, Scion-DTU, Lyngby, Denmark
    3CINF - Centre for Individual Nanoparticle Functionality, Technical University of Denmark, Lyngby, Denmark
    4IMEC, Leuven, Belgium
    5Inst. voor Kern- en Stralingsfysica, K. U. Leuven, Leuven, Belgium

    Presentation Slides

  • Improvement of Pattern Effect by Optical-Absorption Carbon Film and Flexibly-Shaped-Pulse Flash Lamp Annealing
    S. Kato, T. Aoyama, T. Onizawa, K. Ikeda, Y. Ohji
    Semiconductor Leading Edge Technologies, Inc (Selete), Ibaraki, Japan

    Presentation Slides

  • Non-contact, Non-destructive Characterization of Ge Content and SiGe Layer Thickness using Multi-wavelength Raman Spectroscopy
    Woo Sik Yoo, T. Ueda, T. Ishigaki,K. Kang
    WaferMasters, San Jose, CA

    Presentation Slides

  • Issues in Modeling, Supervision, and Fault Detection for Automated RTP Systems
    Hamdi A. Awad
    Dept. of Industrial Electronics and Control Eng., Faculty of Electronic Engineering, Minufiya University, Egypt


  • Variable Frequency Microwave Induced Low Temperature Dopant Activation in Ion Implanted Silicon
    T. L. Alford, School of Materials, Arizona State University, Tempe, AZ
    I. Ahmad, R. Hubbard, Lambda Technologies, Morrisville, NC

    Presentation Slides

  • Microwave Based Technique for Ultra-fast and Ultra-high Temperature Thermal Processing of Compound Semiconductors and Nano-scale Si Semiconductors
    Yong-Lai Tian, LT Technologies LLC , Fairfax, VA

    Presentation Slides

  • Microwave Permittivity of As and B Implanted and Annealed Silicon
    B. Lojek1,2,H. Song1, C. Douglas1
    1Electrical and Computer Engineering Department, UCCS, Colorado Springs
    2Atmel Corporation, Colorado Springs, CO

    Presentation Slides

  • Formation of Thin Ni2Si and NiSi Films using Low Temperature Rapid Thermal Processing
    J.P. Li, A. Hunter, R. Ramanujam, M. Liu, L. Tertitski, E. Tran, N. Tam, A. Lerner
    Applied Materials, Santa Clara, CA

    Presentation Slides

  • Advances on 32nm NiPt Salicide Process
    Yi-Wei Chen1, Nien-Ting Ho1, J. Lai1, T.C. Tsai1, C.C. Huang1, J.Y. Wu1
    Ben Ng2, A. Mayur2, A. Tang2, S. Muthukrishnan2, J. Zelenko2, H. Yang3
    1United Microelectronics, Tainan, Taiwan
    2Applied Materials, Sunnyvale, CA
    3Applied Materials Taiwan, Hsinchu, Taiwan

    Presentation Slides

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