1st International Rapid Thermal Processing Conference
RTP 1993
Scottsdale, Arizona
PLENARY SESSION
Rapid Thermal Processing of Semiconductors 1963 - 1993.
Where to from Here?
B. Lojek, AMD
Thermal Model for Rapid Thermal Processors: Theory and Applications.
J.M. Dilhac, N. Nolhier, LAAS/CNRS
Rapid Thermal Processing: National, Sematech, and SRC Roadmaps.
E.L. Hall, Sematech
Cost of Ownership Analysis of the Manufacturing Goals for Rapid Thermal Processors to be Used in 0.25 Micron Manufacturing.
L.A. Larson, Sematech, R.A. Martinez, Intel, D. Lindholm, Sematech
Development Trends in Rapid Isothermal Processing (RIP) Dominated Semiconductor Manufacturing.
R. Singh, Clemson University
Rapid Thermal Processing: Equipment, Sensors, and Process Technologies for Sub-half Micron Semiconductor IC Manufacturing.
M.M. Moslehi, L. Velo, A. Paranjpe, J. Kuehne, S. Huang,
C. Schaper, T. Breedijk, H. Najm, D. Yin, Y.J. Lee,
D. Anderson, R. Chapman, C. Davis, Texas Instruments
PROCESS INDUCED DEFECTS IN SEMICONDUCTORS
Thermal Processing Induced Extended Defect Generation in Silicon.
J. Vanhellemont, C. Claeys, IMEC
Rapid Thermal Process-Induced Defects in Czochralski Silicon.
S. Hahn, Stanford University
Plastic Deformation of the Silicon Wafer.
A.E. Stephens, Texas Instruments
Metal Contamination Risks and Lifetime Diagnostics in RTP Wafer Processing.
P. Eichinger, GeMeTec, T. Falter, Fraunhofer-Institute
Defects Induced in Silicon by Rapid Thermal Annealing.
E. Susi, CNR-LAMEL
Patterned-Induced Pattern Misregistration After BPSG RTA Reflow.
W. Feil, M. Drew, J. Moench, Motorola
Thermal Stress Effect on Rapid Thermal Oxidation.
R. Deaton, Memphis State University
DEVICE APPLICATION
Polysilicon Emitter Bipolar Transistors Fabricated by Rapid Thermal Processing.
I.R.C. Post, United Technologies, P. Ashburn, J.D. Williams, N.E. Moiseiwitsch, University of Southampton, R.C. Jerome, United Technologies
The Effects of Cooling Rate on MOS Properties.
K. Heyers, V. Lauer, P. Balk, Technical University Aachen
Early Stages of the Epitaxial Realignment of Poly-Silicon Films onto Silicon Substrates: Integration and Size Effects.
C. Spinella, A. Cacciato, IMETEM-CNR, F. Benyaich,
S. Pannitteri, Universita di Catania, E. Rimini, IMETEM-CNR
Titanium Silicide Formation by RTA: Device Implications.
M. Miller, Motorola
Selective Rapid Thermal CVD of TiSi2 for Contacts to Shallow Junctions.
G.C. Xing, M.C. Ozturk, S.P. Ashburn, S.M. Celik, X.Ren,
M. Sanganeria, K.E. Violette, North Carolina State University
Silicide Formation During Rapid Thermal Processing: General Experimental Features and Computer Simulation.
V.E. Borisenko, Minsk Radioengineering Institute
Rapid Thermal Processing and Low Thermal Processing Used in Polysilicon Thin Film Transistors Fabrication.
E. Campo, F. Scheid, D. Bielle-Daspet, A. Martinez,
LAAS-CNRS
DIFFUSION
Junction Formation in Silicon by RTA.
R.B. Fair, MCNC
Dopant Diffusion and Activation in Implanted Silicon.
S. Solmi, CNR-LAMEL
Enhanced Diffusion of Substitutional Impurities in Silicon During RTA: A Collective Phenomenon?
A. Nylandsted Larsen, University of Aarhus
Activation and Diffusion of Phosphorus by Rapid Thermal Processing.
B. Hartiti, A. Slaoui, R. Stuck, J-C. Muller, P. Siffert,
Centre de Recherches Nucleaires
The Influence of the Solubility Limit on Diffusion in Implanted Silicon.
E. Antoncik, University of Aarhus
Deconvolution of Shallow SIMS Profiles Resulting from Rapid Thermal Annealing.
L. Borucki, Motorola
Modeling of Polysilicon Diffusion Sources for RTA Processing.
F. Lau, M. Biebl, Siemens
Generation and Roles of Si Interstitials in Thermal Oxidation of Silicon.
M. Umeno, Osaka University
Doping Induced Defects with Regard to Device Technology.
A. Bakowski, J. Katcki, D. Tomaszewski, J. Gibki, W. Jung,
S. Kasjaniuk, K. Klima, Institute of Electron Technology
Rapid Thermal Annealing of Arsenic Implanted Silicon: Heating Rate Effects and Dopant Redistribution.
D.K. Sadana, P.M. McFarland, F. Cardone, A. Acovic, IBM
J.P. de Souza, R.F.P. Fichtner, University of Porto Alegre
Semi-Empirical Multi-Zone Model for the Enhanced Diffusion of Ion Implanted As and B in Silicon During Rapid Thermal Annealing.
T.H. Huang, H. Kinoshita, D.L. Kwong, University of Texas
Rapid Thermal Processing in Application for Ultra Shallow Junction Fabrication.
W. Zagozdzon-Wosik, P.B. Grabiec, University of Houston,
G. Lux, Charles Evans & Associates
TEMPERATURE MEASUREMENT
Process Diagnostics Using Wafer Temperature Mapping.
W. Renken, SensArray
Ellipsometry Process Monitoring and Control in Rapid Thermal Processing.
H. Massoud, Duke University
Emittance Compensated RTP Temperature Measurement Principle and Practice.
Z. Wang, Luxtron, C. Schietinger, B. Adams, Accufiber
The Temperature Dependence of the Emissivity of Semiconductors.
P.J. Timans, Cambridge University
Improved RTP Repeatability Using Advanced Temperature Measurement and Control Concepts.
J. Gelpey, B. Peuse, C. Manzanilla, Peak Systems
Temperature Measurement in a Furnace Heated RTP System.
C. Lee, High Temperature Engineering
OXIDATION AND RTPCVD
Comparison of Gate N2O Oxynitride Grown in an RTP and in a Conventional Furnace.
Y. Okada, P.J. Tobin, S.A. Ajuria, R.I. Hegde, Motorola
Rapid Thermal Chemical Vapor Deposition for Silicon Based Microelectronics Manufacturing.
M.C. Ozturk, J.J. Wortman, North Carolina State University
Integrated Gate Dielectric and Stacked Capacitor Formation Using Single-Wafer CVD; Device Performance and Hardware Configuration/Requirements.
A. Kermani, AG Associates, R.P.S. Thakur, Micron Semiconductor
Growth and Physical Properties of RT-LPCVD Polysilicon.
B. Semmache, S. Krieger-Kaddour, M. Lemiti, D. Barbier,
INSA, S. Fayeulle, Ecole Centrale de Lyon, A. Laugier, INSA
Rapid Thermal Chemical Vapor Deposition and Rapid Thermal Annealing, a Break Through for Special Applications.
O. Dulac, JIPELEC
Reduced Thermal Budget Process Using a New Concept Single Wafer Reactor.
A. Shimizu, F. Mieno, A. Tsukune, H. Nomura, H. Ohta,
H. Tekunoh, M. Kuramae, N. Setoguti, K. Watanabe,
Y. Furumura, FUJITSU
The Effect of Oxygen Source Purity on a Rapid Thermal Grown Oxide.
L.J. Arias,Jr., P. Rushbrook, Peak Systems, C. Carlson, A. R. Homyak, B.A. Huling, Air Products and Chemicals, W.P. Cox, AMD
MARKETING SESSION AND EVENING PANEL DISCUSSION
Strategic Issues in RTP Developments and Applications.
J.M. Salzer, Salzer Technology Enterprises
Panelist
PERSPECTIVE PROCESSING OF SEMICONDUCTORS
The Optical Functions of Silicon at Elevated Temperatures and Their Application to Pulsed Laser Annealing.
G.E. Jellison, Jr., D.H. Lowndes, R.F. Wood, Oak Ridge National Laboratory
Characteristics of Excimer Laser Based Systems for Amorphous Thin Layer Silicon Processing.
G. Zaal, B. Burghardt, Lambda Physik, H-J. Kahlert, MicroLas Lasersystem
Feedback Effects During Laser-Assisted RTP of Thin Films.
M. Wautelet, University of Mons-Hainaut
A Single Wafer Cold Wall Reactor for Rapid Thermal Processing by Microwaves.
R. Buchta, Ericsson Components, D. Sigurd, J. Svennebrink, Swedish Institute of Microelectronics
Low Temperature UV Induced Oxidation of Silicon and Silicon- Germanium Strained Layers.
V. Craciun, I.W. Boyd, University College London
Plasma Damage Recovery by RTP Anneal.
S.U. Kim, J. Eun, Intel
EQUIPMENT MODELING
Strategies for Modelling of Rapid Thermal Processing Systems.
T.P. Merchant, H-H. Lie, J.V. Cole, K.F. Jensen, MIT
Modeling and Control of RTCVD of Polysilicon.
S. Chatterjee, T.F. Edgar, I. Trachtenberg, University of Texas
Reactor Scale and Feature Scale Simulation of Programmed Rate CVD.
J-H. Park, T.S. Cale, Arizona State University
Model-Based RTP Chamber Design.
A.J. Toprac, L.M. Eyman, J.K. Elliott, Sematech
Simulation of Silicon Deposition in Horizontal Radiantly Heated CVD Reactors.
E.W. Egan, Motorola
ADVANCED PROCESSING
Single Wafer Integrated Processing System for High Temperature Thin Films Formation.
I. Beinglass, S.S. Schwartz, Applied Materials
Application of Rapid Thermal Processing in Manufacturing: The Effect of Emissivity and Coupling.
J.S. Nakos, IBM
Reaction Time Analysis in Rapid Thermal Annealing.
Z. Nenyei, A. Tillmann, AST Elektronik
Interaction of Lamp Pulse Annealing with the Internal Gettering Mechanisms in CZ Silicon.
N-E. Chabane-Sari, S. Krieger-Kaddour, C. Maddalon-Vinante, E. Borne, D. Barbier, INSA
Dynamic Temperature Uniformity of RTP Using Single Zone Illumination.
B. Peuse, A. Rosekrans, J. Gelpey, P. Dick, Peak Systems
Silicon Solar Cell Processing by RTP.
A. Eyer, I. Reis, R. Schindler, B. Wagner, Fraunhofer-Institut
Rapid Thermal Processing Using a Continous Heat Source.
C. Lee, A.B. Wittkower, High Temperature Engineering
New RTPECVD System for III-V Compounds and Integrated Optics Applications.
B.R. Stampfli, ADDAX SA
Thermal Radiation Phenomena in Rapid Thermal Processing of Thin-Film Structures.
P.Y. Wong, I.N. Miaoulis, Tufts University
Rapid Thermal PECVD Integrated Cluster Tool Modules for Advanced Submicron Processing.
S.C. Shatas, Modular Process Technology