3rd International Rapid Thermal Processing Conference
RTP 1995
August 30 - September 1, 1995
Amsterdam Marriott Hotel
Amsterdam, The Netherlands
PLENARY SESSION
Wednesday, August 30, 1995
Future Fabs: Is there a place for RTP
R.P.Kramer, Philips Semiconductors
RTP in the Factory of the Future.
R. Doering, Texas Instruments
Challenges and Opportunities for Dislocation-Free Silicon Wafer Fabrication and Thermal Processing: An Historical Review.
H.R. Huff, R. K. Goodall, SEMATECH
300mm Implementation.
F. Robertson, SEMATECH
Hot Wall Rapid Thermal Processor.
C. Lee, G.C. Noblitt III, A. Wittkower, High Temperature Engineering Corp.
Practical Aspects of Quartzware Fabrication.
H. Young, D. Hellman, D. Terry, Heraeus
How to Manage the Pattern Challenge?
Z. Nenyei, S. Markus, AST Elektronik, A. Gschwandtner, Siemens
PROCESS INDUCED DEFECT IN SEMICONDUCTORS
Thursday, August 31, 1995
Rapid Thermal Annealing: A Tool for studying Diffusion Processes in Semiconductors.
N.A. Stolwijk, H. Bracht, University of Munster, W. Lerch, AST Eklektronik
A Study of the Surface Electrical Properties of Processed Silicon.
E. Susi, A. Castaldini, A. Cavallini, A. Poggi, Istituto LAMEL -CNR
Characterization of RTP and Furnace Grown Oxides by Surface Photovoltage.
J. Lowell, AMD, D.-L. Kwong, University of Texas
Measurement of Iron Contamination in P-Type Silicon Using Capacitance Transient
Spectroscopy in Conjuction with RTP.
T. Bateman, Wacker Siltronix, J. Lowell, AMD, D. Thusius, SULA Technologies
The Effect of Rapid Thermal Annealing Parameters on Ion Implanted Arsenic in Silicon.
L. Lambrinos, A. Nylandsted Larsen, University of Aarhus, B. Lojek, Silicon Annealing
The Time and Temperature Dependence of Electrical Dopant Deactivation During
Prolonged Anneal in High-Dose 31P Ion Implanted and Rapidly Recrystalized Silicon.
J. Kato, Seiko Epson
ADVANCED PROCESSING I
Thursday, August 31, 1995
The Effect of Rapid Thermal Processing on Quarter Micron Devices.
J.S. Kim, K.Y Lee, J.Y. Lee, B.C.Kim, M.J. Kim, S.K. Jang, B.H. Hwang, K.P. Lee, K.N. Kim, J.W. Park, Samsung Electronics
Rapid Thermal Silicidation TiSi2 and CoSI2.
K. Maex, IMEC
Rapid Thermal Processing for Power Devices.
D. Nagel, U. Kuhlmann, R. Sittig, University of Braunschweig
TaSi2 Emitters for Silicon Bipolar Power Transistors Formed by Rapid Thermal Processing.
D. Girginoudi, N. Georgoulas, A. Thanailakis, Democritus University, A. Christou, University of Maryland
Characteristics of In-Situ Doped Amorphous Silicon Gate Electrode Formed by New Hot Cluster Tool.
H. Watatani, K. Suzuki, A. Shimizu, A.Tsukune, H. Yagi, Fujitsu
Optimization of Multiple RTA Processes for Volume Manufacturing.
B. Axan, Motorola
ADVANCED GATE DIELECTRICS
Thursday, August 31, 1995
Characterization of ULSI Gate Dielectric Films Formed in a Rapid Thermal N2O AMbient.
S.P.Tay, J.P. Ellul, Z.H. Lu, Northern Telecom, K. Hebert, Institute of Microstructural Science, E.A. Irene, University of North Carolina
8:45AM141
In-Situ Vapor Phase Pre-Gate Oxide Cleaning and Rapid Thermal Oxide Growth in a Cluster Tool.
M.L. Green, Y. Ma, D. Brasen, B.J. Sapjeta, AT&T
RTP NO-Nitridation of Ultrathin SiO2 for Superior Device Reliability and Suppressed Boron Penetration in Advanced Dual-Gate CMOS Logic Application.
D. Wristers, J. Fulford, AMD, L.K. Han, T.Chen, C. Lin, K.Chen, D.L.Kwong, University of Texas
4nm Gate Dielectrics Prepared by RTP low Pressure Oxidation in O2 and N2O Atmosphere.
A.J. Bauer, E.P. Burte, H. Ryssel, Fraunhofer Institute
RTP Impact on Thin Gate Oxides.
G. Ghidini, N. Bellafiore, SGS-Thomson
Nitrided Tunnel Oxides for Improved Endurance of EEPROM Cells.
R. Kakoschke, Siemens
Thin Silica Layer Nitridation from a Nitrogen Doped Silicon Source.
P. Temple Boyer, F. Olivie, K. Kassmi, E. Scheid, G. Sarrabayrouse, A. Martinez, LAAS-CNRS
Control of the Spatial Distribution of Nitrogen Atoms at the Molecular Lavel in Ultra-Thin Dielectrics Prepared by plasma-Assisted and Rapid Thermal Processing.
G. Lucovsky, D.R. Lee, C. Parker, S. Hattangady, H. Niimi, J.R. Hauser, North Carolina State University
HEAT TRANSFER IN MICROSTRUCTURE
Thursday, August 31, 1995
Comprehensive RTP Modelling and Simulation.
A.F. Erofeev, A.V.Kolpakov, T.M.Makhviladze, A.V.Martjushenko, A.V.Panjukhin, O.S.Volchek, SOF-TEC, M. Orlowski, Motorola
Length Scales and Pattern Effects in RTP Heat Transfer.
J.P. Hebb, K.F. Jensen, MIT
Comprehensive 3D Physically Based Simulations of RTP at Atmospheric Pressure: Comparison with Experimental Observations.
J.V. Cole, T. Mihopoulos, K.F. Jensen, MIT, K.L. Knutson, AG Associates
Effect of Wafer Backside Morphology on RTP Ti Silicidation.
E.Z. Liu, H.M. Li, H.L. Chew, Y.S. Lin, L. Chan, Chartered Semiconductor
Improvement of Transient Thermal Uniformity During Rapid Thermal Processing by Application of Computer Aided Equipment Control.
A. Tillmann, T. Knarr, AST Elektronik
TEMPERATURE MEASUREMENT
Friday, September 1, 1995
Wafer Emissivity for RTP - Modeled and Measured.
C. Schietinger, Accufiber/Luxtron, B. Peuse, Applied Materials
In Situ Ultrasonic Wafer Temperature Sensor for RTP.
F. L. Degertekin, P. Dankoski, B.T. Khuri-Yakub, Stanford University
Toward RTP Control Using Ultrasonic Sensors.
P. Dankoski, F. L. Degertekin, B.T. Khuri-Yakub, G. Franklin, K. Saraswat, Stanford University
2D Real Time Temperature Measurements in a New Short Wavelength Arc Lamp RTP Chamber for Improved Uniformity.
D.M. Camm, M. Lefrancois, B. Hickson, D. Parfeniuk, Vortek,
B. Lojek, Silicon Annealing
A New Fiber Optic Array System for Wafer Temperature Measurement in a Multi-zone and Multiphase RTP Furnace.
Z. Wang, C. Schietinger, M. Sun, Accufiber/Luxtron, G. Xing, AG Associates
Temperature Uniformity Control in RTP Using Multivariable Adaptive Control.
S. Morales, B. Dahhou, J.-M. Dilhac LAAS-CNRS
What Does it Take to Calibrate and Measure 1000oC +/- 3oC in RTP System.
B. Lojek, Silicon Annealing, W. Renken, SensArray
Wafer Temperature Measurements Correction for Multi-Wavelength Imaging Pyrometer using Kalman Filtering.
S. Belikov, M. Kaplinsky, N.M. Ravindra, F.M. Tong, W.F. Kosonocky, NJIT, J.R. Markham, K. Kinsella, Advanced Fuel Research
ADVANCED PROCESSING II
Friday, September 1, 1995
Correlation Between Thermal Stress and the Performance of Devices Processed by RTP.
D.L. Chapek, R.A. Weimer, K.F. Schuegraf, A. Ahmad, R.P.S. Thakur, Micron Technolgy, R. Singh, Clemson University
Investigation on Rapid Thermal Processing of Ion Implanted GaAs Using Si, Graphite and Ceramics AlN Susceptor.
S. Yamaga, B. Hisamori, C. Kimura, New Japan Radio
Rapid Thermal Chemical Vapor deposition of Titanium Nitride Layers for Application in Interchip via Metallization Technology.
B. Froeschle, P. Ramm, Fraunhofer Institute, W. Pamler, Siemens
Rapid Thermal Processing Using a Vertical Batch Furnace with Twoo Isothermal Zones.
G.G. Lee, S.J. Kim, K. Fujihara, U.I. Chung, S.I. Lee, M.Y. Lee, Samsung Electronic
Electron Beam Deposited Dopant Sources for Ultra Shallow Junction Formation Via Rapid Thermal Diffusion.
W. Zagozdzon-Wosik, K. Korablev, I. Rusakova, M.F. Davis, J.C. Wolfe, University of Houston, D. Simons, P. Chi. NIST, J.H. Shi, SEMATECH
Impurity Activation in Poly-Si Films by Rapid Thermal Annealing Using Flat Gas Flames.
W-F. Qu, A. Kitagawa, Y. Masaki, Y. Kakimoto, M. Suzuki, Kanazawa University
Zone Melting Recrystalization of Thick Polysilicon Films.
J.-M. Dilhac, D. Zerrouk, C. Ganibal, P. Rossel, M. Bafleur, LAAS-CNRS
THERMAL PROCESSING EQUIPMENT
Friday, September 1, 1995
RTP Equipment Considerations for a Manufacturing Environment.
K. Pfeifer, W. Roche, Philips Semiconductor
Hot Processing Concepts: Capabilities and Performance.
C. Werkhoven, M.A. van Driel, ASM International
Small Batch Thermal Processing.
J.M. Kowalski, SVG/Thermco System
300mm & Mini-BatchTM RTCVD Procesess.
G. Moore, Moore Epitaxial
A Process Specific RTP System for Cost Effective Production.
J.K. Elliott, L.F. Derks, J. Hoog, M. Whitlock, Matrix Integrated Systems
Real-Time Gas Sensor and Simulation For RTCVD Metrology and Control.
L.L. Tedder, G.B. Lu, B.F. Conaghan, G.W. Rubloff, North Carolina State University
EQUIPMENT CONTROL AND MODELING
Friday, September 1, 1995
Thermal Modeling of Rapid Thermal Processing Systems.
J.J. Ebert, A. Emami-Naeini, R. Kosut, ISI
Application of Feedback Linearization to Models of Rapid Thermal Processing (RTP) Reactors.
H. Aling, J. Abedor, J.L. Ebert, A. Emami-Naeini, R.L.Kosut, ISI
Equipment Simulation of the Robustness of Open-Loop Rapid Thermal Processing.
A. Kersch, T. Schafbauer, H.-J. Timme, Siemens, A. Ajmera, IBM
The Application of Monte Carlo and Finite Element Simulation for Optimization of an RTP Systems.
T.P. Merchant, E.W. Egan, R.P. Lorigan, Motorola
Real Time Estimation and Adaptive Control for RTP Systems.
S. Belikov, D. Hur, B. Friedland, NJIT
Generalized Method for Realistic Temperature Simulation in Multizone Rapid Thermal Systems.
R.V. Agabushnam, R.K. Singh, University of Florida, R. Iyer, S. Sharan, G. Sandhu, Micron Semiconductor