4th International Conference on Advanced Thermal Processing of Semiconductors
RTP 1996
September 11 - September 13,1996
Red Lion Riverside Hotel
Boise, Idaho
PLENARY SESSION
Wednesday, September 11, 1996
9:15AM
Advanced Technology Challenges for DRAM
T. T. Doan, Micron Technology, Boise, ID
10:00AM
Key Aspects of Thermal Processing for Deep Sub-micron Device Fabrication
Y. Tanabe, N. Suzuki, N. Natsuaki, Hitachi, Tokyo, Japan
10:45AM
RTP and Advanced Device Requirements
J.J. Wortman, M.C. Ozturk, J.R. Hauser, University of North Carolina, Raleigh, NC
11:30AM
The Effects of Rapid Thermal Annealing on Gigabit Scaled DRAMs
J.S. Kim, B.C. Kim, K.Y. Lee, S.K. Jang, D.H. Kim, J.Y. Lee, K.H. Kim, K.N. Kim, J.W. Park, Samsung Electronics, Korea
RAPID THERMAL PROCESSING
1:15PM
Rapid Thermal Processing: Coming of Age at Texas Instruments: 0.2μm Development leading to Larger Diameter Wafer Manufacturing.
M.F. Pas , C.R. Cleavelin, S.D. Pas, J. Kuehne, J. Kittl, R. Wise, P. Tiner, S. Hsia, Texas Instruments, Dallas, TX, G. Miner, P. Hay, Applied Materials, Santa Clara, CA
1:45PM
A Novel BPSG Steam Reflow for Sub-Half Micron CMOS Devices
G.G. Lee, K. Fujihara, J.M. Ha, H.K. Kang, M.Y. Lee, Samsung Electronics, Korea
2:15PM
Pattern Induced Temperature Non-uniformity during Rapid Thermal Processing
J. P. Hebb, K.F. Jensen, MIT, MA
3:00PM
ASPEN RTP: A Revolution in Rapid Thermal Processing
W. DeHart, K. Johnsgard, J.McDiarmid, Mattson Technology, Fremont, CA
3:30PM
Advanced Processing for Future Semiconductors using RTP
K. Ando, Y. Matsubara, E. Hasagawa, NEC, Japan
4:00PM
Metal Annealing Processes Using Continous Heat Source RTP
R. Schenk, Z. Lu, Motorola, Phoenix, AZ, C. Lee, G. Lecouras, HTE-Eaton, Peabody, MA
ADVANCED PROCESSING I
1:15PM
Dual Wafer RTP System For Large-Diameter Wafer Process
F. Ikeda, Y. Imai, Kokusai Electric Co. Tokyo, Japan
1:45PM
C4 Reflow Process using Fast Ramp Vertical Furnace
C. Lee, B. Bramhall, HTE-Eaton, Peabody, MA, R.J. Ledoux, Pyramid Technical Consultants, Waltham, MA
2:15PM
Advanced Cluster Tool Technology: Current Status
L. Deutschmann, F. Glowacki, T. Knarr, AST Elektronik, Germany, N. Verhaar, C. Werkhoven, ASM International, Bilthoven, The Netherlands
3:00PM
A High Pressure Vertical Thermal Processor for Advanced Thermal Processing Solutions
S.S. Kim, D.M. McCloskey, A. Shalem, GaSonics International, San Jose, CA
3:30PM
Plasma Doping and Rapid Thermal Annealing for Fabricating Ultra Shallow Boron Doped Junctions.
M. Takase, B. Mizuno, I. Nakayama, M. Ogura, Matsushita, Osaka, Japan
4:00PM
Backside Film Removal and its impact on Semiconductor Production
H. Kruwinus, SEZ Villach, Austria
4:30PM
Rapid Thermal Oxidation on Si/SiGe Strained-Layer Heterostructures
J.J. Ren, M. Liaw, B. Turner, C. Stein, F. Hampton, T. Merchant, M. Janakiram Motorola, Mesa, AZ
Thursday, September 12, 1996
ADVANCED PROCESSING II
9:00AM
The Characteristics of SixNy Film Formed by Rapid Thermal CVD
E.S. Kim, Y.D. Kim, Y.W. Park, H.K. Kang, Samsung Electronics, Korea
9:30AM
Rapid Isothermal Processing Based CVD of High and Low K Dielectrics
R. Singh, R. Sharangpani, Clemson University, Clemson, CA
10:00AM
Advanced Ultra-Dry Process for Growing Practical Ultimate Ultrathin Silicon Oxide Gate Films in CMOS Devices.
H. Yamada, NTT, Atsugi, Japan
10:30AM
RTA Process for Low Energy Si Implanted Layer in GaAs Substrates
T. Taniguchi, Japan Radio Co., Japan
11:00AM
In Situ Surface Pretreatment Effect on Nucleation and Film Structure of Polysilicon in a RTCVD System.
Y.Z. Hu, C. Basa, C.Y. Zhao, E.A. Irene, University of North Carolina, Chapel Hill, NC, S.P. Tay, AG Associates, San Jose, CA
11:30AM
Influence of Rapid Thermal Annealing on Polysilicon Film Characteristics for Micro Electro-Mechanical Structures.
S.E. Garling, D.J. Koch, Motorola, Phoenix, AZ
TEMPERATURE MEASUREMENT
1:00PM
Temperature Measurement Strategies for Rapid Thermal Processing in Semiconductor Manufacturing.
P.J. Timans, AG Associates, San Jose, CA
1:30PM
Fundamental Limits of the Use of Pyrometry in RTP
G. Chen, T. Borca-Tasciuc, R.B. Fair, Duke University, Durham, NC
2:00PM
Difference in Measurement of Temperature at the Wafer Level and Die Level
B. Lojek, Silicon Annealing, and Cypress Semiconductor, Round Rock, TX
2:30PM
Real Time, In-Situ Temperature Monitoring Using Diffuse Reflectance Spectrocsopy
J.L. Booth, B.T. Beard, Thermionics Northwest, Port Townsend, WA, T.P. Pearsall, Z.Z. Wang, Univeristy of Washington, Seatle, WA, J.E. Stevens, M.G. Blain, T.L. Meisenheimer, Sandia National Laboratory, Albuquerque, NM
3:15PM
Optical Temperature Measurement in RTP by Frequency Analysis of Periodic Light Signals
J.D. Stuber, I. Trachtenberg, T.F. Edgar, University of Texas, Austin, TX, J. Kiefer Elliot, SensArray Corp. , Austin, TX
3:45PM
Application of Spectral Emissometry to Silicon Related Materials
N.M. Ravindra, F.M. Tong, S. Abedrabbo, W. Chen, W. Schmidt, New Jersey Institute of Technology, Newark, NJ, A.K. Nanda, T. Speranza, A.M. Tello, Sematech, Austin, TX
ADVANCED DIELECTRIC FORMATION
9:00AM
Kinetics, Chemical Composition and Reoxidation Kinetics of Rapid Thermal N2O Oxynitride Growth.
J. Kuehne, S. Hattangady, Texas Instruments, Dallas, TX
9:30AM
New Result of NO-grown Dielectrics for FLOTOX/FLASH-EEPROM Applications
A. Mattheus, A. Gschwandtner, R. Kakoschke, M. Kerber, A. Talg, Siemens, Munich, Germany
10:00AM
Properties of Sub-micron MOSFET's with NO-Annealed Gate Oxides
Z.Q. Yao, R. Ghodsi, Quality Semiconductors, H.B. Harrison ,S. Dimitrijev, Griffith University, T.Y. Yeo, University of Queensland, Australia
10:30AM
Low Temperature Deposition of Gate Dielectrics by the Jet Vapor Deposition Process
G. Cui, T. Tamagawa, B.L. Halpern, J.J. Schmitt, Jet Process Corp. New Haven, CT, X. Wang, M. Khare, Y. Shi, T.P. Ma, Yale University, New Haven, CT
11:00AM
Growth Kinetics and N2 Profiles of Ultrathin Gate Oxides Grown Using High Preasure N20.
R. Ganesh, S.Kim, D. McCloskey, GaSonics International, San Jose, CA
11:30AM
Effects of Ni Surface Contamination on the Quality of Gate Oxides Grown in RTP and Furnace Systems.
W. R. Aderhold, Y. Wasserman, AG Associates, San Jose, CA, S. Bogen, Texas Instruments, Freising, Germany, A. Bauer, E.P. Burte, Fraunhofer Institut, Erlangen, Germany
EQUIPMENT AND CONTROL
1:00PM
RTP Specifications and Beyond...
Z. Nenyei, A. Tillmann, J. Gelpey, AST Elektronik, Germany
1:30PM
Cost of Ownership and Temperature Measurement and Control Capability Evaluation of Applied Materials' Rapid Thermal Processor under Sematech J100 Project.
T.J. Riley, AMD, Austin, TX, A.K. Nanda, Sematech, Austin, TX, S. Hossian-Pas, M.F. Pas, Texas Instruments, Dallas, G. Miner, Applied Materials, Santa Clara, CA
2:00PM
RTP Robust Control Design, Part I - Sensitivity Analysis
M. Refai, J.L. Ebert, A. Emami-Naeini, R.L. Kosut, Integrated Systems, Santa Clara, CA
2:30PM
RTP Robust Control Design, Part II - Controller Synthesis
G.W. van der Linden, J.L. Ebert, A. Emami-Naeini, R.L. Kosut, Integrated Systems, Santa Clara, CA
3:15PM
Implementation and Control of RTP Processes
W. Koutny, Cypress Semiconductor, San Jose, CA
3:45PM
Model-based Control of a Rapid Thermal Processor
K.S. Balakrishnan, T.L. Cooper, AG Associates, San Jose, CA, T.E. Edgar, University of Texas, Austin, TX
8:00PM
Furnace and RTP - Where do they go?
J.M. Salzer, Salzer Technology Enterprises, Inc. Santa Monica, CA
8:20PM
What is the cost of +/- 3oC Temperature Measurement and Control for Large Wafer Diameter and Why Is It needed?
B. Lojek, Silicon Annealing, Inc. and Cypress Semiconductor, Round Rock, TX
Friday, September 13, 1996
SOLAR CELLS AND LARGE AREA DEVICES
9:00AM
Suitability of RTP for High Throughput Solar Cell Manufacture
M. Narayanan, J. Wohlgemuth, Solarex, Frederick, MD
9:30AM
Role of Rapid Isothermal Processing in the Manufacturing of Bulk and Thin Film Solar Cells and Other Large Area Devices.
R. Singh, D. Ratakonda, Clemson University, Clemson, SC, A. Rohatgi, Georgia Institute of technolohy, Atlanta, GA
10:00AM
Silicon Solar Cells Based on Rapid Thermal Processing: Device and Material Manufacturing.
A. Slaoui, A. Lachiq, R. Monna, L. Ventura, D. Angermeier, J.C. Muller, Laboratorie PHASE, Strasbourg, France
10:30AM
Advanced RTP of Silicon Solar Cells - Lifetime Effects and Spectral Engineering
A. Breymesser, S. Noel, R. Schindler, Fraunhofer Institute, Freiburg, Germany
11:00AM
Measurement and Analysis of RTP Related Defects Using Differential IR Interference Microscopy.
T. Lu, P. Flesher, P. Borden, A. Daniel, High Yield Technology, R. N. Morishige, Y. Wasserman, AG Associates, San Jose, CA, S. Hahn, PacRim Technology
MODELING AND SIMULATION
1:00PM
Modeling of Radiative Heat Transfer in a RTP Chamber Using a Finite-Volume Method.
J.C. Chai, P. Dutta, G. Ramchandani, Tennessee Technological University, Cookeville, TN, O. Adetutu, Motorola, Austin, TX
1:30PM
Reactor Scale Computational Fluid Dynamics in a Product Development Environment
K.L. Knutson, S.M. Campbell AG Associates, San Jose, CA
2:00PM
Simulation of Thermal Warpage and Stress in Patterned Wafers during RTP
A.F. Erofeev, T.M. Makhviladze, A.V. Panjukhin, O.S. Volchek, SOFT-TEC Moscow, Russia, O. Adetutu, Motorola, Austin, TX
2:30PM
3D Simulation and Optimization of an RTO Chamber with Monte Carlo Heat Transfer in Comparison with Experiments.
A. Kersch, T. Schafbauer, Siemens, Munich, Germany
3:15PM
Model Based Temperature Uniformity Control during Rapid Thermal Processing
A. Tillmann, AST Elektronik, Germany
3:45PM
Modeling of Silicon Deposition in Cylindrical RTCVD System
A.F. Erofeev, T.M. Makhviladze, A.V. Martjushenko, A.V. Panjukhin, SOFT-TEC Moscow, Russia, O. Adetutu, Motorola, Austin, TX
4:15PM
A Computational Model for Rapid Thermal Processing Systems
M.G. Giridharan, A. Krishnan, CFD Research Corp. Huntsville, AL
APPLICATION OF RTP TO THE FRONT AND BACK END MANUFACTURING
9:00AM
New Method for the Formation and Anneal of Cobalt Silicide
A. Atanos, P. Rushbrook, Mattson Technology, Fremont, CA
9:30AM
RTP Cobalt Silicidation as a Solution for 0.25μm CMOS and Beyond
Q.F. Wang, A. Daniel, S.P. Tay, Y. Wasserman, AG Associates, San Jose, CA
10:00AM
Emissivity of Titanium and Cobalt Silicide
D.F. Takeuti, H. Ahmed, Cambridge University,Cambridge, UK, P.J. Timans, AG Associates, San Jose, CA
10:30AM
Enabling Process Integration of Poly Silicon and WSix based on Rapid Thermal CVD.
H.P.W. Hey, Applied Materials, Santa Clara, CA
11:00AM
Silicide Contacts to Shallow Junctions Produced via Rapid Thermal Diffusion from Electron Beam Deposited Dopant Sources.
W. Zagozdzon-Wosik, J. Li, I. Rusakova, Z.H. Zhang, D. Marton, W.K. Chu, University of Houston
11:30AM
Effects of Patterned Films on the Uniformity of Rapid Thermal Oxidation
J. Kuehne, S. Hattangady, M. Pas, Texas Instruments, Dallas, TX
ADVANCED THERMAL PROCESSING EQUIPMENT
1:00PM
Front-End-of-the-Line (FEOL) Cluster Technologies: There is Enough Room for RTP
R.P.S. Thakur, R. Weimer, S. DeBoer, K. Schuegraf, C. Powell, L. Breiner, Micron Technology, Boise, ID
1:30PM
A MESC/CTMC-Based "Best-of-Bread" Cluster Tool
C. Werkhoven, N. Verhaar, T. Bbergman, ASM International, Bilthoven, The Netherlands, L. Deutschmann, AST Elektronik, Germany
2:00PM
Quartz Glass for RTP Applications
R. J. MacKinnon, Heraeus Amersil, Los Altos, CA
2:30PM
Vertical Batch Cluster Tools for Advanced Semiconductor Processing
R. Wilhelm, H. Sprey, C. Werkhoven, E. Granneman, ASM International, Bilthoven, The Netherlands