H. Kitayama, Tokyo Electron Tohoku, Japan

Aspects of RTP Equipment for Semiconductor Device Manufacturing.

N. Ogami, A. Yasue, Dainippon Screen Kyoto, Japan

Water Vapor Generator by Catalytic Reactor.

K. Kawada, Y. Minami, A. Morimoto, N. Ikeda, Fujikin Corp., Osaka, Japan T. Ohmi, Tohoku University, Sendai, Japan

Growth of High Quality Wet Oxides by Rapid Thermal Processing.

R. Sharangpani, J. Das, S.P. Tay, R.P.S. Thakur, AG Associates, San Jose, CA T.C. Yang, K.C. Saraswat, Stanford University, Stanford, CA

ADVANCED RTP AND FURNACE TECHNOLOGIES

Characterization of a Susceptor-Based, Low Pressure RTP System in the Temperature Range of 400-1150 oC.

W.S. Yoo, A.J. Atanos, Mattson Technology, Fremont, CA

Heater Design of Rapid Thermal Processing Systems for Sub-0.18mm Device Technology.

J. G. Li, P.J. Timans, R.P.S. Thakur, AG Associates, San Jose, CA

The AST Evolution System: An Advanced 200 mm Cluster-Type RTP Toll for 0.18 mm and Beyond.

R. Bremensdorfer, W. Blersch, E. Merz, S. Paul, Ch. Grunwald, Steag-AST, Dornstad, Germany

Competitive Process Analysis and Some New Optimization Methods in RTP.

Z. Nenyei, C. Grunwald, W. Lerch, J.Niess, Steag-AST, Dornstad, Germany D.F. Downey, Varian, Gloucester, MA R. Ostermeir, Wacker Siltronic AG, Burghausen, Germany

Processing of 200 and 300 mm Wafers in an Advanced Rapid Thermal Processing Systems.

A. Tillmann, S. Buschbaum, S. Frigge, U. Kreiser, D. Loffelmacher, P. Schmid, Th. Theilig, Steag-AST, Dornstad, Germany

Rapid Thermal Growth of Ultrathin (<2.0nm) Oxides and Oxynitrides for ULSI, Using NO-O2 Gas Mixtures.>

M.L. Green, T.W. Sorsch, G. Timp, B.J. Sapjeta, P.J. Silverman, B.E. Weir, Bell Laboratories / Lucent Technologies, Murray Hill, NJ, E.L. Garfunkel, T. Gustafsson, H.C. Lu, Rutgers University, Piscataway, NJ E.P. Gusev, IBM, Yorktown Heights, NY W.N. Lennard, University of Western Ontario, London, Ontario, Canada

Wet Oxidation by RTP with Lamp Heating System and its Application to P+ Shallow Junction Tailoring.

A. Shima, M. Honda, Y. Nakatsuka, Y. Tanabe, N. Natsuaki, Hitachi, Tokyo, Japan

Scaled-Down Performance Comparison Between RTO and Vertical Furnace N2O-annealled Gate Oxide.

Dong Zhong, Joe Hui, Chartered Semiconductor, Singapore Flora S. Ip, Institute of Microelectronics, Singapore

Thin Gate Dielectric Growth for 0.18 mm Devices and Beyond by In-Situ Hydrogen Pre-Cleaning and Suitable Nitrogen Incorporation.

H.H. Shih, J.Y. Wu, W. Lur, United Microelectronics, Hsin-Chu, Taiwan

Precise Control of Nitrogen Profiles and Nitrogen Bond States for Highly Reliable N2O Oxynitride

H.Umeda, A.Teramoto, H.Tamura, K.Kobayashi, Y. Nishida, H.Sayama, S.Shimizu, K. Terada, K.Kawase, Y.Ohno, H. Miyoshi, Mitsubischi Electric Corporation, Hyogo, Japan

In-situ Cleaning and Thin Oxide Processing Capabilities for Sub-Quarter Micron Technology in Integrated Process Modules.

B. Froeschle, N. Sacher, F. Glowacki, Steag-AST, Dornstad, Germany T. Pompl, G. Innertsberger, A. Gschwandtner, Siemens, Munich, Germany

ADVANCED PROCESSING I

Rapid Thermal Annealing of Low Energy Phosphorus Implants.

J.W. Chow, D.F. Downey, Varian, Gloucester, MA S.D. Markus, Steag-AST, Tempe, AZ

Trench and Contact Fill With In-Situ Doped Polysilicon Using an Atmospheric Pressure RTCVD Process.

C. Pomarede, ASM France, Montpellier, France J.W.H. Maes, ASM Europe, Heverlee, Belgium A. Grassl, A. Gschwandtner, Siemens AG, Munich, Germany I.J. Raaijmakers, ASM America, Phoenix, AZ

A Fundamental Ion-Implanted GaAs MESFET using RTA Metod.

K. Kasai, T. Taniguchi, Japan Radio Co., Kamifukuoka, Japan

Formation of Silicide with Cobalt and TiN Capped Cobalt by Rapid Thermal Processing.

Y.-Z. Hu, S.P. Tay, R.P.S. Thakur, AG Associates, San Jose, CA

Wet Hydrogen Oxidation System for Metal Gate LSI's.

T. Nagahama, N. Yamamoto, Y. Hanaoka, M. Saito, Y. Tanabe, Hitachi, Tokyo, Japan

TEMPERATURE AND EQUIPMENT MODELING

Optical Pyrometry in RTP/RTPCVD Systems: A New Approach.

E. Glazman, 3T-True Temperature Technologies, Misgav, Israel P. Alzera, Z. Atzmon, H. Gilboa, A.Thon, AGI Migdal HaEmek, Israel

Application of Metrology Data Processing and Analysis to Rapid Thermal Processing.

M. Boin, Boin GmbH, Tomerdingen, Germany W. Lerch, STEAG AST Elektronik, Dornstadt, Germany

Control System Design Strategy in a GUI-based Software Tool for RTP Chamber Design.

Y.-P. Harn, Octant Technologies, Sunnyvale, CA M. Yousefpor, ISI, Sunnyvale, CA

Model-Based Control of Fast-Ramp RTP Systems.

D. De Roover, A.Emami-Naeini, J.L. Ebert, S. Ghosal, G.W. van der Linden, SC Solution, Santa Clara, CA

Effect of Ramp Rate on Shallow Junction Formation.

D. Jennings, Applied Materials, Santa Clara, CA G. de Cock, M. A. Ford, Applied Materials, Horsham, West Sussex

Quartzware Surface Topography Improvements in LPCVD Applications.

J. Veteran, M. Soliz, Motorola APRDL, Austin, TX, H. Young, R. MacKinnon, D. Hellman, Heraeus Amersil

ADVANCED PROCESSING II

Gate Dielectric Engineering for Advanced CMOS Applications

G. Miner, Gary Xing, D. Lopes, Applied Materials, Santa Clara, CA

Dislocation Control on Silicon Wafers in a Susceptor Based Rapid Thermal Processing Tool.

A. Karauoi, Q. Zhang, A. Romanowski, G.A. Rozgonyi, North Carolina State University,Raleigh, NC P. Rushbrook, J.F. Daviet, Mattson Technology, Fremont, CA

Selective HemiSpherical Grain (HSG) Poly-Silicon Deposition Using RTCVD with In-situ Wafer Cleaning.

B.J. Brosilow, S. Levy, Y.E. Gilboa, AG Associates, San Jose, CA

Very Thin Cobalt Silicide Formation and Annealing in a Susceptor-Based Low Pressure RTP System.

W.S. Yoo, A.J. Atanos, D.M. Witworth, Mattson Technology, Fremont, CA