Semiconductor Industry Trends

Tony E. Giraudo, K. Nootbaar, ATMEL Corp. Colorado Springs. CO

Single Wafer Thermal Processing

J.K. Truman, N. Kunan, C. Czarnik, G. Miner, C. Gronet, Applied Materials, Santa Clara, CA

A Practical Roadmap for RTP

J. Gelpey, STEAG RTP Systems, Peabody, MA

Roadmap and Challenges in Deep Sub-Micron CMOS Process Integration for 0.18um and beyond

P.K.Vasudev, National Instruments, Austin, TX

Single Wafer Furnace Technology (SWFT)

C. Ratliff, T. Kolbe, R. Sloan, S. Sedehi, A. Helms, Jr., J. Kowalski SVG Thermal System Division, Scotts Valley, CA T. Qiu, MIT, Cambridge, MA

Athermal Annealing of Implanted Layers

B. Lojek, M. Whiteman, ATMEL., Colorado Springs, CO

Logic in RTP

L.H. Nguyen, W. Dietl, J. Niess, Z. Nényei, STEAG RTP Systems, Dornstadt, Germany, S.P. Tay, STEAG RTP Systems, San Jose, CA G. Obermeier, Wacker Siltronic AG, Germany D.F. Downey, Varian Semiconductors Equipment, Gloucester, MA

Trade-offs in Temperature Control of Fast-Ramp RTO and RTA Systems

D. De Roover, A. Emani-Naeini, J.L. Ebert, R.L. Kosut, SC Solutions, Santa Clara, CA

ADVANCED GATE DIELECTRICS

The Effects of Thin Oxides and Oxynitrides on the Ion Implantation and Rapid Thermal Anneal of Sub-keV Phosphorus

S. W. Falk, D.F. Downey, Varian Semiconductors Equipment, Gloucester, MA S.D. Markus, STEAG RTP Systems, Tempe, AZ

Characterization of Oxynitride Films Grown Using NO Based Gas Mixture in RTP

R. Sharangpani, S.P. Tay, STEAG RTP Systems, San Jose, CA

Nitrogen Incorporation Effects on Stacked Nitrided Gate Dielectric By Rapid Thermal Oxidation

H.H. Shih, T.R. Yew, J.Y. Wu, W. Lur, United Microelectronics, Hsin Chu, Taiwan

Pre Metal Dielectrics Processes for 0.15 mm Technology and Beyond

J.H. Das, A.D. Daniel, D. Clarke, STEAG RTP Systems, San Jose, CA, Y. Brichko , K. Kapkin, S. Al-Lami, SVG, Thermal System, Scotts Valley, CA

In-Situ Steam Oxidation for Gate Dielectric and STI Liner Oxide

H.H. Shih, G.S. Yang, G.J.Liu, T.R. Yew, J.Y. Wu, W. Lur, United Microelectronics, Hsin-Chu, Taiwan, J. Shih, F. Li, R. Shih, J. Su, Applied Materials, Hsin Chu, Taiwan

Anomalous Boron Penetration Through Ultrathin Gate Oxide During RTA.

R.B. Fair, Duke University, Durham, NC

ADVANCED PROCESSING I

Rapid Thermal Oxidation Optimization for Gate Oxide Formation

F. Guyader, S. Desmaison, M. Bidaut, ST Microelectronics, Crolles, France S. Tallavarjula, Applied Materials, Santa Clara, CA

Comparison of CVD and Thermal Grown Nitride Layers for CMOS Gate Dielectrics and DRAM Capacitors

Grasl, M. Gutsche, A. Geschwandtner, Infineon Technologies, Munchen, Germany C. Pomarede, J. Weidmann, C. Werkhoven, ASM International, Bilthoven, The Netherlands

Controlling Bipolar Current Gain with RTP Ultra-Thin Oxides

D. Coolbaugh, A. Ballantine, J. Gilbert, IBM Microelectronics, Essex Junction, VT

Formation of In Situ Doped Hemi-Spherical Silicon Grain Layers in Vertical LPCVD Furnace

P.M. Zagwijn, S.R.A. Van Aerde, R.J. Wilhelm, ASM Europe, Bilthoven, The Netherlands

Evaluation of an AST3000 RTP-Tool for Production

R. Hayn, W. Kegel, J-U. Sachse, Infineon Technologies, Dresden, Germany R. Reisdorf, STEAG RTP Systems, Dornstadt, Germany

RTP of Thin Nitrous Oxides

G. Roters, W.Lerch, Z. Nényei, STEAG RTP Systems, Dornstadt, Germany A. Huber, G. Obermeier, Wacker Siltronic, Burghausen

Rapid Thermal Annealing of Cooper Metallization

D. Clarke, R.P.S. Thakur, STEAG RTP San Jose, CA, V. Bhaskaran, E. Broadbent, Novellus System, System, Wilsonville, OR J. Sanchez, University of Michigan, Ann Arbor, MI

TEMPERATURE MEASUREMENT

Emissivity Independent Temperature Measurement in a Furnace-Based Rapid Thermal Processing System

J. Hebb, A. Shajii, Eaton Corporation, Peabody, MA

ITS-90 Traceable Calibration of Radiometers using Wire/Thin-Film Thermocouples in the NIST RTP Tool: Effective Emissivity Modeling

B.K. Tsai and D.P. DeWitt, NIST, Gaithersburg, MD

ITS-90 Traceable Calibration of Radiometers using Wire/Thin-Film Thermocouples in the NIST RTP Tool: Experimental Procedures and Results

C.W. Meyer, D.W. Allen, D.P. DeWitt, K.G. Kreider, F.J. Lovas, B.K. Tsai, NIST, Gaithersburg, MD

Thin-Film Calibration Wafer Materials for RTP Temperature Measurement

K.G. Kreider, G. J. Gillen, NIST, Gaithersburg, MD

Repeatability and Accuracy of Optical Fiber Thermometers in the Production Environment

R.R. Dils, Sekidenko Inc., M. Yam, Alex R, A. Hunter, B. Adams, Applied Materials, Santa Clara, CA

Wafer Temperature Control and Uniformity in a Furnace-Based Rapid Thermal Processing System

A. Shajii, J. Hebb, B. Matthews, X. Yin, Eaton Corporation, Peabody, MA

Performance of TEMPMATCH™ Transfer Standards for In Situ Calibration of Optical Fiber Thermometers

M. Yam, Alex, R, A. Hunter, B. Adams, Applied Materials, Santa Clara, CA R.R. Dils, Sekidenko Inc.

Simulation of Heat Transfer in Axis-Symmetric RTCVD Reactor Using Spectral Ray Tracing, Configuration Factor and 1D Approximation

G. Kohav, STEAG CVD Systems, Migdal Ha'Emek, Israel

Thermal Model of Rapid Thermal Processing Systems

J. Urban, Institute for Applied Research, Ulm, Germany, W. Blersch, STEAG RTP Systems, Dornstadt, Germany

Control in RTP Process using LQG Method

J. Park, K. Jung, Kornic System, Taejon, South Korea

An Investigation into Emissivity Enhancement for Temperature Measurement in RTP Reactor Using a "Virtual" Blackbody Cavity

A. Hunter, Applied Materials, Santa Clara, CA

ADVANCED PROCESSING II

Rapid Thermal Processing of Newer Silicide Materials

A. Singhal, M. Yam, T. Trowbridge, D. Lopes, D. Saigal, G. Lai, Applied Materials, Santa Clara, CA

Study on Reduction of GaAs Wafer Slip in RTA Using Parallel Linear-Tube Halogen Lamp Furnace

T. Taniguchi, Japan Radio Corp., Japan

Detection and Analysis of RTP Induced Defects

G. Mastracchio, M.L. Polignano, C. Bresolin, D. Caputo, G. Pavia, ST Microelectronics, Agrate Brianza, Italy

Fault Detection on a Rapid Thermal Processor: False Alarms due to Previously Misprocessed Wafers

G. Scheid, T.J. Riley, Q. Wang, AMD Austin, TX

The Effects of Oxygen on Silicide Formation in an RTP System

R. Schenk, R. Matthew, Motorola, Chandler, AZ

RTO in High Volume DRAM Production

G. Wein, Z. Nenyei, STEAG RTP Systems, Dornstadt, Germany S. Marcus, STEAG RTP Systems, Tempe, AZ

SHALLOW JUNCTION FORMATION

Manufacturing Control of Ultra-Shallow Junction Formation by RTA Annealing

S.P. Tay, Y.Z. Hu, V. Kirtikar, STEAG RTP Systems, San Jose, CA P. Bordern, G. lane, L. Bechtler, Boxer Cross Inc., Menlo Park, CA

The Effects of Fast Ramp-Rates and "Spike" Anneals on Ultra-low Energy 11B+, 49BF2, 75As+ and 31P+ Ion Implants

D.F. Downey, S.W. Falk, Varian Semiconductors Equipment, Gloucester, MA S.D. Markus, STEAG RTP Systems, Tempe, AZ

Reduction of Dopant Diffusion by Optimizing Temperature-Time Profiles of Rapid Thermal Processes

I. Bork, W. Molzer, Infineon Technologies, Munchen, Germany C.D. Nguyen, University of Bremen, Germany

RAPID THERMAL FURNACE

Loadlock Furnace Application to Ultrathin Oxide Films,

Hironobu Miya, Manabu Izumi, Kazuhiro Yuasa, Shinobu Konagata, Kokusai Electric, Japan Yasutaka Kimura, Lenski Markus, Tetsuo Endo, Fujio Masuoka, Tohoku University, Japan Takayuki Takahagi, Hiroshima University, Japan

Floating Wafer Rapid Thermal Furnace LEVITOR4000

V.I. Kuznetsov, E.H.A. Grenneman, ASM International, Bilthoven, The Netherlands

Wafer Temperature Characterization in a Susceptor-Based, Low Pressure Rapid Thermal Processing System

W.S. Yoo, A.J. Atanos, Mattson Technology, Fremont, CA

High Quality Ultra-Thin Gate Oxide/Oxynitride Formation Using Fast Ramp Vertical Furnace

Y. Tada, G. Nakamura, K. Akiyama, A. Suemura, M. Imai, Tokyo Electron Limited, Japan

Annealing Ultra-Low Energy Boron Implants with an Arc Lamp System

D.M. Camm, M.E.Lefrancois, S.M. Coy, Vortek Industries, Canada A.T. Fiory, Lucent Technologies, Murray Hill, NJ A. Agarwal, Eaton Semiconductor Equipment, Beverly, MA

Optimization of Fast Ramp RTP Performance

S. R. Vosen, Sandia National Laboratories, Livermore P. Timans, J. Li, N. Acharya, STEAG RTP Systems, San Jose.